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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleSTL11N65M2
STMicroelectronics
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

STL11N65M2 - STMicroelectronics

Manifakti Nimewo Pati
STL11N65M2
Manifakti
STMicroelectronics
Allelco Nimewo Pati
32D-STL11N65M2
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 650V POWERFLAT 5X5 H
Deskripsyon detaye
Pake
-
Done fèy
STL11N65M2.pdf
RoHs Status
Nan stok: 3860

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Kantite

Espesifikasyon

Espesifikasyon STL11N65M2 Tech
STMicroelectronics - STL11N65M2 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak STMicroelectronics - STL11N65M2

Pwodwi atribi Valè atribi  
Manifakti STMicroelectronics  
Vgs (th) (Max) @ Id 4V @ 250µA  
Vgs (Max) ±25V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake -  
Seri -  
Rds Sou (Max) @ Id, Vgs 670mOhm @ 3.5A, 10V  
Dissipasyon pouvwa (Max) 85W (Tc)  
Pake / Ka -  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TA)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 410 pF @ 100 V  
Pòtay Charge (Qg) (Max) @ Vgs 12.4 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 650 V  
Kouran - Kontini Drain (Id) @ 25 ° C 7A (Tc)  
Nimewo pwodwi baz STL11  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou STMicroelectronics STL11N65M2.

Pwodwi atribi STL11N65M2 STL120N4F6AG STL120N8F7 STL110N10F7
Nimewo Pati STL11N65M2 STL120N4F6AG STL120N8F7 STL110N10F7
Manifakti STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Fèt tip N-Channel N-Channel N-Channel N-Channel
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Rds Sou (Max) @ Id, Vgs 670mOhm @ 3.5A, 10V 3.6mOhm @ 13A, 10V 4.4mOhm @ 11.5A, 10V 6mOhm @ 10A, 10V
Operating Tanperati -55°C ~ 150°C (TA) 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Pòtay Charge (Qg) (Max) @ Vgs 12.4 nC @ 10 V 63 nC @ 10 V 60 nC @ 10 V 72 nC @ 10 V
Pake / Ka - 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN
Drenaj Sous Voltage (Vdss) 650 V 40 V 80 V 100 V
Vgs (th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4.5V @ 250µA
Nimewo pwodwi baz STL11 STL120 STL120 STL110
Founisè Aparèy pake - PowerFlat™ (5x6) PowerFlat™ (5x6) PowerFlat™ (5x6)
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 10V
Dissipasyon pouvwa (Max) 85W (Tc) 96W (Tc) 4.8W (Ta), 140W (Tc) 136W (Tc)
Kapasite Antre (Ciss) (Max) @ Vds 410 pF @ 100 V 3700 pF @ 25 V 4570 pF @ 25 V 5117 pF @ 50 V
Vgs (Max) ±25V ±20V ±20V ±20V
FET Feature - - - -
Kouran - Kontini Drain (Id) @ 25 ° C 7A (Tc) 55A (Tc) 120A (Tc) 107A (Tc)
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Seri - Automotive, AEC-Q101, STripFET™ F6 STripFET™ F7 DeepGATE™, STripFET™ VII

STL11N65M2 fich PDF

Download STL11N65M2 PDF fich ak dokiman STMicroelectronics pou STL11N65M2 - STMicroelectronics.

PCN obsolescence/ eol
Mult Dev OBS 3/Jul/2020.pdf
Asanble PCN/orijin
Mult Dev Wafer Site Add 3/Aug/2018.pdf

Shipment

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Sètifikasyon & Manm

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STMicroelectronics

STL11N65M2

STMicroelectronics
32D-STL11N65M2

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