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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleSTL24N65M2
STMicroelectronics
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

STL24N65M2 - STMicroelectronics

Manifakti Nimewo Pati
STL24N65M2
Manifakti
STMicroelectronics
Allelco Nimewo Pati
32D-STL24N65M2
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 650V 14A PWRFLAT HV
Deskripsyon detaye
Pake
8-PowerVDFN
Done fèy
STL24N65M2.pdf
RoHs Status
Nan stok: 22200

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon STL24N65M2 Tech
STMicroelectronics - STL24N65M2 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak STMicroelectronics - STL24N65M2

Pwodwi atribi Valè atribi  
Manifakti STMicroelectronics  
Vgs (th) (Max) @ Id 4V @ 250µA  
Vgs (Max) ±25V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake PowerFlat™ (8x8) HV  
Seri MDmesh™ M2  
Rds Sou (Max) @ Id, Vgs 250mOhm @ 7A, 10V  
Dissipasyon pouvwa (Max) 125W (Tc)  
Pake / Ka 8-PowerVDFN  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 1060 pF @ 100 V  
Pòtay Charge (Qg) (Max) @ Vgs 29 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 650 V  
Kouran - Kontini Drain (Id) @ 25 ° C 14A (Tc)  
Nimewo pwodwi baz STL24  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou STMicroelectronics STL24N65M2.

Pwodwi atribi STL24N65M2 STL26N30M8 STL24N60M2 STL260N3LLH6
Nimewo Pati STL24N65M2 STL26N30M8 STL24N60M2 STL260N3LLH6
Manifakti STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 4.5V, 10V
FET Feature - - - -
Fèt tip N-Channel N-Channel N-Channel N-Channel
Vgs (th) (Max) @ Id 4V @ 250µA 5V @ 250µA 4V @ 250µA 1V @ 250µA (Min)
Vgs (Max) ±25V ±25V ±25V ±20V
Kapasite Antre (Ciss) (Max) @ Vds 1060 pF @ 100 V 1430 pF @ 100 V 1060 pF @ 100 V 6375 pF @ 25 V
Kouran - Kontini Drain (Id) @ 25 ° C 14A (Tc) 23A (Tc) 18A (Tc) 260A (Tc)
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Dissipasyon pouvwa (Max) 125W (Tc) 114W (Tc) 125W (Tc) 166W (Tc)
Seri MDmesh™ M2 MDmesh™ M8 MDmesh™ II Plus STripFET™ H6
Pòtay Charge (Qg) (Max) @ Vgs 29 nC @ 10 V 30.8 nC @ 10 V 29 nC @ 10 V 61.5 nC @ 4.5 V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Nimewo pwodwi baz STL24 STL26 STL24 STL260
Drenaj Sous Voltage (Vdss) 650 V 300 V 600 V 30 V
Founisè Aparèy pake PowerFlat™ (8x8) HV PowerFlat™ (5x6) PowerFlat™ (8x8) HV PowerFlat™ (5x6)
Rds Sou (Max) @ Id, Vgs 250mOhm @ 7A, 10V 89mOhm @ 11.5A, 10V 210mOhm @ 9A, 10V 1.3mOhm @ 22.5A, 10V
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 175°C (TJ)
Pake / Ka 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN

STL24N65M2 fich PDF

Download STL24N65M2 PDF fich ak dokiman STMicroelectronics pou STL24N65M2 - STMicroelectronics.

PCN anbalaj
Material Barrier Bag 17/Dec/2020.pdf
PCN konsepsyon/spesifikasyon
STLYYY 22/Dec/2020.pdf

Shipment

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Sètifikasyon & Manm

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STMicroelectronics

STL24N65M2

STMicroelectronics
32D-STL24N65M2

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