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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleSTL45N10F7AG
STMicroelectronics
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

STL45N10F7AG - STMicroelectronics

Manifakti Nimewo Pati
STL45N10F7AG
Manifakti
STMicroelectronics
Allelco Nimewo Pati
32D-STL45N10F7AG
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 100V 18A POWERFLAT
Deskripsyon detaye
Pake
8-PowerVDFN
Done fèy
STL45N10F7AG.pdf
RoHs Status
Nan stok: 40900

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon STL45N10F7AG Tech
STMicroelectronics - STL45N10F7AG espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak STMicroelectronics - STL45N10F7AG

Pwodwi atribi Valè atribi  
Manifakti STMicroelectronics  
Vgs (th) (Max) @ Id 4.5V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake PowerFlat™ (5x6)  
Seri Automotive, AEC-Q101, STripFET™ F7  
Rds Sou (Max) @ Id, Vgs 24mOhm @ 9A, 10V  
Dissipasyon pouvwa (Max) 72W (Tc)  
Pake / Ka 8-PowerVDFN  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 1450 pF @ 50 V  
Pòtay Charge (Qg) (Max) @ Vgs 19.5 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 100 V  
Kouran - Kontini Drain (Id) @ 25 ° C 18A (Tc)  
Nimewo pwodwi baz STL45  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou STMicroelectronics STL45N10F7AG.

Pwodwi atribi STL45N10F7AG STL42P4LLF6 STL42P6LLF6 STL40N10F7
Nimewo Pati STL45N10F7AG STL42P4LLF6 STL42P6LLF6 STL40N10F7
Manifakti STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Nimewo pwodwi baz STL45 STL42 STL42 STL40
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Founisè Aparèy pake PowerFlat™ (5x6) PowerFlat™ (5x6) PowerFlat™ (5x6) PowerFlat™ (5x6)
Pòtay Charge (Qg) (Max) @ Vgs 19.5 nC @ 10 V 22 nC @ 4.5 V 30 nC @ 4.5 V 19 nC @ 10 V
Kouran - Kontini Drain (Id) @ 25 ° C 18A (Tc) 42A (Tc) 42A (Tc) 40A (Tc)
Dissipasyon pouvwa (Max) 72W (Tc) 75W (Tc) 100W (Tc) 5W (Ta), 70W (Tc)
Fèt tip N-Channel P-Channel P-Channel N-Channel
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Operating Tanperati -55°C ~ 175°C (TJ) 175°C (TJ) 175°C (TJ) -55°C ~ 175°C (TJ)
Vgs (Max) ±20V ±20V ±20V ±20V
Kapasite Antre (Ciss) (Max) @ Vds 1450 pF @ 50 V 2850 pF @ 25 V 3780 pF @ 25 V 1270 pF @ 50 V
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 4.5V, 10V 4.5V, 10V 10V
FET Feature - - - -
Rds Sou (Max) @ Id, Vgs 24mOhm @ 9A, 10V 18mOhm @ 5A, 10V 26mOhm @ 4.5A, 10V 24mOhm @ 10A, 10V
Pake / Ka 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN
Drenaj Sous Voltage (Vdss) 100 V 40 V 60 V 100 V
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Seri Automotive, AEC-Q101, STripFET™ F7 STripFET™ F6 STripFET™ F6 DeepGATE™, STripFET™ VII
Vgs (th) (Max) @ Id 4.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 4.5V @ 250µA

STL45N10F7AG fich PDF

Download STL45N10F7AG PDF fich ak dokiman STMicroelectronics pou STL45N10F7AG - STMicroelectronics.

PCN anbalaj
Mult Dev Inner Box Chg 9/Dec/2021.pdf
Asanble PCN/orijin
Mult Devices Testing 10/May/2018.pdf
Fich
STL45N10F7AG.pdf
PCN konsepsyon/spesifikasyon
Mult Dev Mark Chg 9/Sep/2020.pdf STLYYY 20/Feb/2018.pdf

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Sètifikasyon & Manm

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STMicroelectronics

STL45N10F7AG

STMicroelectronics
32D-STL45N10F7AG

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