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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleSTL7N10F7
STL7N10F7 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

STL7N10F7 - STMicroelectronics

Manifakti Nimewo Pati
STL7N10F7
Manifakti
STMicroelectronics
Allelco Nimewo Pati
32D-STL7N10F7
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 100V POWERFLAT
Deskripsyon detaye
Pake
8-PowerVDFN
Done fèy
STL7N10F7.pdf
RoHs Status
Nan stok: 58570

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Espesifikasyon

Espesifikasyon STL7N10F7 Tech
STMicroelectronics - STL7N10F7 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak STMicroelectronics - STL7N10F7

Pwodwi atribi Valè atribi  
Manifakti STMicroelectronics  
Vgs (th) (Max) @ Id 4.5V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake PowerFlat™ (3.3x3.3)  
Seri DeepGATE™, STripFET™ VII  
Rds Sou (Max) @ Id, Vgs 35mOhm @ 3.5A, 10V  
Dissipasyon pouvwa (Max) 2.9W (Ta), 50W (Tc)  
Pake / Ka 8-PowerVDFN  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 920 pF @ 50 V  
Pòtay Charge (Qg) (Max) @ Vgs 14 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 100 V  
Kouran - Kontini Drain (Id) @ 25 ° C 7A (Tj)  
Nimewo pwodwi baz STL7  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou STMicroelectronics STL7N10F7.

Pwodwi atribi STL7N10F7 STL75N3LLZH5 STL75N8LF6 STL7N80K5
Nimewo Pati STL7N10F7 STL75N3LLZH5 STL75N8LF6 STL7N80K5
Manifakti STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Nimewo pwodwi baz STL7 STL75 STL75 STL7N80
Founisè Aparèy pake PowerFlat™ (3.3x3.3) PowerFlat™ (5x6) PowerFlat™ (5x6) PowerFlat™ (5x6)
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Pake / Ka 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN
Dissipasyon pouvwa (Max) 2.9W (Ta), 50W (Tc) 60W (Tc) 80W (Tc) 42W (Tc)
Vgs (Max) ±20V ±18V +21V, -16V ±30V
Kapasite Antre (Ciss) (Max) @ Vds 920 pF @ 50 V 1510 pF @ 25 V 6895 pF @ 25 V 360 pF @ 100 V
Rds Sou (Max) @ Id, Vgs 35mOhm @ 3.5A, 10V 6.1mOhm @ 9.5A, 10V 7.4mOhm @ 9A, 10V 1.2Ohm @ 3A, 10V
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 4.5V, 10V 5V, 10V 10V
Fèt tip N-Channel N-Channel N-Channel N-Channel
Kouran - Kontini Drain (Id) @ 25 ° C 7A (Tj) 75A (Tc) 75A (Tc) 3.6A (Tc)
Pòtay Charge (Qg) (Max) @ Vgs 14 nC @ 10 V 11.8 nC @ 4.5 V 125 nC @ 4.5 V 13.4 nC @ 10 V
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Vgs (th) (Max) @ Id 4.5V @ 250µA 1V @ 250µA 1V @ 250µA 5V @ 100µA
FET Feature - - - -
Drenaj Sous Voltage (Vdss) 100 V 30 V 80 V 800 V
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Seri DeepGATE™, STripFET™ VII STripFET™ V DeepGATE™, STripFET™ VI SuperMESH5™

STL7N10F7 fich PDF

Download STL7N10F7 PDF fich ak dokiman STMicroelectronics pou STL7N10F7 - STMicroelectronics.

Asanble PCN/orijin
Carrier/Cover Tape Supplier 23/Sep/2021.pdf
PCN anbalaj
IPD/15/9333 21/Jul/2015.pdf
Fich
STL7N10F7.pdf

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STL7N10F7 Image

STL7N10F7

STMicroelectronics
32D-STL7N10F7

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