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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleSTP11NM60N
STP11NM60N Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

STP11NM60N - STMicroelectronics

Manifakti Nimewo Pati
STP11NM60N
Manifakti
STMicroelectronics
Allelco Nimewo Pati
32D-STP11NM60N
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 600V 10A TO220AB
Deskripsyon detaye
Pake
TO-220-3
Done fèy
STx11NM60N.pdf
RoHs Status
Nan stok: 4770

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Espesifikasyon

Espesifikasyon STP11NM60N Tech
STMicroelectronics - STP11NM60N espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak STMicroelectronics - STP11NM60N

Pwodwi atribi Valè atribi  
Manifakti STMicroelectronics  
Vgs (th) (Max) @ Id 4V @ 250µA  
Vgs (Max) ±25V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-220  
Seri MDmesh™ II  
Rds Sou (Max) @ Id, Vgs 450mOhm @ 5A, 10V  
Dissipasyon pouvwa (Max) 90W (Tc)  
Pake / Ka TO-220-3  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati 150°C (TJ)  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 850 pF @ 50 V  
Pòtay Charge (Qg) (Max) @ Vgs 31 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 600 V  
Kouran - Kontini Drain (Id) @ 25 ° C 10A (Tc)  
Nimewo pwodwi baz STP11N  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou STMicroelectronics STP11NM60N.

Pwodwi atribi STP11NM60N STP11NM65N STP11NM60FP STP11NM80
Nimewo Pati STP11NM60N STP11NM65N STP11NM60FP STP11NM80
Manifakti STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Fèt tip N-Channel N-Channel N-Channel N-Channel
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 10V
Pòtay Charge (Qg) (Max) @ Vgs 31 nC @ 10 V 29 nC @ 10 V 30 nC @ 10 V 43.6 nC @ 10 V
Pakèt Tube Tube Tube Tube
FET Feature - - - -
Nimewo pwodwi baz STP11N STP11N - STP11
Kapasite Antre (Ciss) (Max) @ Vds 850 pF @ 50 V 800 pF @ 50 V 1000 pF @ 25 V 1630 pF @ 25 V
Kouran - Kontini Drain (Id) @ 25 ° C 10A (Tc) 11A (Tc) 11A (Tc) 11A (Tc)
Dissipasyon pouvwa (Max) 90W (Tc) 110W (Tc) 35W (Tc) 150W (Tc)
Pake / Ka TO-220-3 TO-220-3 TO-220-3 Full Pack TO-220-3
Seri MDmesh™ II MDmesh™ II MDmesh™ MDmesh™
Mounting Kalite Through Hole Through Hole Through Hole Through Hole
Founisè Aparèy pake TO-220 TO-220 TO-220FP TO-220
Vgs (th) (Max) @ Id 4V @ 250µA 4V @ 250µA 5V @ 250µA 5V @ 250µA
Operating Tanperati 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Vgs (Max) ±25V ±25V ±30V ±30V
Drenaj Sous Voltage (Vdss) 600 V 650 V 600 V 800 V
Rds Sou (Max) @ Id, Vgs 450mOhm @ 5A, 10V 455mOhm @ 5.5A, 10V 450mOhm @ 5.5A, 10V 400mOhm @ 5.5A, 10V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)

STP11NM60N fich PDF

Download STP11NM60N PDF fich ak dokiman STMicroelectronics pou STP11NM60N - STMicroelectronics.

Fich
STx11NM60N.pdf

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STP11NM60N Image

STP11NM60N

STMicroelectronics
32D-STP11NM60N

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