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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleSTP16NF06
STP16NF06 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

STP16NF06 - STMicroelectronics

Manifakti Nimewo Pati
STP16NF06
Manifakti
STMicroelectronics
Allelco Nimewo Pati
32D-STP16NF06
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 60V 16A TO220AB
Deskripsyon detaye
Pake
TO-220-3
Done fèy
STP16NF06(FP).pdf
RoHs Status
Nan stok: 83080

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Espesifikasyon

Espesifikasyon STP16NF06 Tech
STMicroelectronics - STP16NF06 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak STMicroelectronics - STP16NF06

Pwodwi atribi Valè atribi  
Manifakti STMicroelectronics  
Vgs (th) (Max) @ Id 4V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-220  
Seri STripFET™ II  
Rds Sou (Max) @ Id, Vgs 100mOhm @ 8A, 10V  
Dissipasyon pouvwa (Max) 45W (Tc)  
Pake / Ka TO-220-3  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 315 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 13 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 60 V  
Kouran - Kontini Drain (Id) @ 25 ° C 16A (Tc)  
Nimewo pwodwi baz STP16  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou STMicroelectronics STP16NF06.

Pwodwi atribi STP16NF06 STP16NK65Z STP16N65M5 STP16NM50N
Nimewo Pati STP16NF06 STP16NK65Z STP16N65M5 STP16NM50N
Manifakti STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Vgs (th) (Max) @ Id 4V @ 250µA 4.5V @ 100µA 5V @ 250µA 4V @ 250µA
Nimewo pwodwi baz STP16 STP16N STP16 STP16N
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Pakèt Tube Tube Tube Tube
Drenaj Sous Voltage (Vdss) 60 V 650 V 650 V 500 V
Kapasite Antre (Ciss) (Max) @ Vds 315 pF @ 25 V 2750 pF @ 25 V 1250 pF @ 100 V 1200 pF @ 50 V
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 10V
FET Feature - - - -
Seri STripFET™ II SuperMESH™ MDmesh™ V MDmesh™ II
Pòtay Charge (Qg) (Max) @ Vgs 13 nC @ 10 V 89 nC @ 10 V 45 nC @ 10 V 38 nC @ 10 V
Vgs (Max) ±20V ±30V ±25V ±25V
Fèt tip N-Channel N-Channel N-Channel N-Channel
Pake / Ka TO-220-3 TO-220-3 TO-220-3 TO-220-3
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Kouran - Kontini Drain (Id) @ 25 ° C 16A (Tc) 13A (Tc) 12A (Tc) 15A (Tc)
Dissipasyon pouvwa (Max) 45W (Tc) 190W (Tc) 90W (Tc) 125W (Tc)
Founisè Aparèy pake TO-220 TO-220 TO-220 TO-220
Mounting Kalite Through Hole Through Hole Through Hole Through Hole
Rds Sou (Max) @ Id, Vgs 100mOhm @ 8A, 10V 500mOhm @ 6.5A, 10V 299mOhm @ 6A, 10V 260mOhm @ 7.5A, 10V

STP16NF06 fich PDF

Download STP16NF06 PDF fich ak dokiman STMicroelectronics pou STP16NF06 - STMicroelectronics.

PCN konsepsyon/spesifikasyon
Mult Dev Adv Material Notice 8/Apr/2019.pdf
Asanble PCN/orijin
Mult Dev Site Closure 13/Feb/2020.pdf
PCN anbalaj
Traceability 06/Mar/2017.pdf
Fich
STP16NF06(FP).pdf

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STP16NF06 Image

STP16NF06

STMicroelectronics
32D-STP16NF06

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