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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleSTP26NM60N
STP26NM60N Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

STP26NM60N - STMicroelectronics

Manifakti Nimewo Pati
STP26NM60N
Manifakti
STMicroelectronics
Allelco Nimewo Pati
32D-STP26NM60N
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 600V 20A TO220AB
Deskripsyon detaye
Pake
TO-220-3
Done fèy
STB,F,P, W26NM60N.pdf
RoHs Status
Nan stok: 12383

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Espesifikasyon

Espesifikasyon STP26NM60N Tech
STMicroelectronics - STP26NM60N espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak STMicroelectronics - STP26NM60N

Pwodwi atribi Valè atribi  
Manifakti STMicroelectronics  
Vgs (th) (Max) @ Id 4V @ 250µA  
Vgs (Max) ±30V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-220  
Seri MDmesh™ II  
Rds Sou (Max) @ Id, Vgs 165mOhm @ 10A, 10V  
Dissipasyon pouvwa (Max) 140W (Tc)  
Pake / Ka TO-220-3  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati 150°C (TJ)  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 1800 pF @ 50 V  
Pòtay Charge (Qg) (Max) @ Vgs 60 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 600 V  
Kouran - Kontini Drain (Id) @ 25 ° C 20A (Tc)  
Nimewo pwodwi baz STP26  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou STMicroelectronics STP26NM60N.

Pwodwi atribi STP26NM60N STP26N60M2 STP270N8F7 STP265N6F6AG
Nimewo Pati STP26NM60N STP26N60M2 STP270N8F7 STP265N6F6AG
Manifakti STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Mounting Kalite Through Hole Through Hole Through Hole Through Hole
Kouran - Kontini Drain (Id) @ 25 ° C 20A (Tc) 20A (Tc) 180A (Tc) 180A (Tc)
FET Feature - - - -
Operating Tanperati 150°C (TJ) - -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Pakèt Tube Tube Tube Tube
Kapasite Antre (Ciss) (Max) @ Vds 1800 pF @ 50 V - 13600 pF @ 50 V 11800 pF @ 25 V
Seri MDmesh™ II MDmesh™ M2 DeepGATE™, STripFET™ VII Automotive, AEC-Q101, STripFET™ F6
Vgs (th) (Max) @ Id 4V @ 250µA - 4V @ 250µA 4V @ 250µA
Rds Sou (Max) @ Id, Vgs 165mOhm @ 10A, 10V - 2.5mOhm @ 90A, 10V 2.85mOhm @ 60A, 10V
Pòtay Charge (Qg) (Max) @ Vgs 60 nC @ 10 V - 193 nC @ 10 V 183 nC @ 10 V
Nimewo pwodwi baz STP26 STP26 STP270 STP265
Vgs (Max) ±30V ±25V ±20V ±20V
Fèt tip N-Channel N-Channel N-Channel N-Channel
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 10V
Founisè Aparèy pake TO-220 TO-220 TO-220 TO-220
Pake / Ka TO-220-3 TO-220-3 TO-220-3 TO-220-3
Dissipasyon pouvwa (Max) 140W (Tc) 169W (Tc) 315W (Tc) 300W (Tc)
Drenaj Sous Voltage (Vdss) 600 V 600 V 80 V 60 V

STP26NM60N fich PDF

Download STP26NM60N PDF fich ak dokiman STMicroelectronics pou STP26NM60N - STMicroelectronics.

PCN konsepsyon/spesifikasyon
Mult Dev Adv Material Notice 8/Apr/2019.pdf
PCN anbalaj
Traceability 06/Mar/2017.pdf
Asanble PCN/orijin
New Molding Compound 13/Sep/2019.pdf
Fich
STB,F,P, W26NM60N.pdf

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Sètifikasyon & Manm

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STP26NM60N Image

STP26NM60N

STMicroelectronics
32D-STP26NM60N

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