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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleSTP45N60DM2AG
STP45N60DM2AG Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

STP45N60DM2AG - STMicroelectronics

Manifakti Nimewo Pati
STP45N60DM2AG
Manifakti
STMicroelectronics
Allelco Nimewo Pati
32D-STP45N60DM2AG
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 600V 34A TO220
Deskripsyon detaye
Pake
TO-220-3
Done fèy
STP45N60DM2AG.pdf
RoHs Status
Nan stok: 9808

Jaden obligatwa yo endike pa yon asterisk (*)
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Espesifikasyon

Espesifikasyon STP45N60DM2AG Tech
STMicroelectronics - STP45N60DM2AG espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak STMicroelectronics - STP45N60DM2AG

Pwodwi atribi Valè atribi  
Manifakti STMicroelectronics  
Vgs (th) (Max) @ Id 5V @ 250µA  
Vgs (Max) ±25V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-220  
Seri Automotive, AEC-Q101, MDmesh™ DM2  
Rds Sou (Max) @ Id, Vgs 93mOhm @ 17A, 10V  
Dissipasyon pouvwa (Max) 250W (Tc)  
Pake / Ka TO-220-3  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 2500 pF @ 100 V  
Pòtay Charge (Qg) (Max) @ Vgs 56 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 600 V  
Kouran - Kontini Drain (Id) @ 25 ° C 34A (Tc)  
Nimewo pwodwi baz STP45  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou STMicroelectronics STP45N60DM2AG.

Pwodwi atribi STP45N60DM2AG STP46NF30 STP45N60DM6 STP45NF3LL
Nimewo Pati STP45N60DM2AG STP46NF30 STP45N60DM6 STP45NF3LL
Manifakti STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Kapasite Antre (Ciss) (Max) @ Vds 2500 pF @ 100 V 3200 pF @ 25 V 1920 pF @ 100 V 800 pF @ 25 V
Pòtay Charge (Qg) (Max) @ Vgs 56 nC @ 10 V 90 nC @ 10 V 44 nC @ 10 V 17 nC @ 5 V
Rds Sou (Max) @ Id, Vgs 93mOhm @ 17A, 10V 75mOhm @ 17A, 10V 99mOhm @ 15A, 10V 18mOhm @ 22.5A, 10V
Vgs (th) (Max) @ Id 5V @ 250µA 4V @ 250µA 4.75V @ 250µA 1V @ 250µA
Drenaj Sous Voltage (Vdss) 600 V 300 V 600 V 30 V
Mounting Kalite Through Hole Through Hole Through Hole Through Hole
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 4.5V, 10V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
FET Feature - - - -
Pake / Ka TO-220-3 TO-220-3 TO-220-3 TO-220-3
Pakèt Tube Tube Tube Tube
Fèt tip N-Channel N-Channel N-Channel N-Channel
Dissipasyon pouvwa (Max) 250W (Tc) 300W (Tc) 210W (Tc) 70W (Tc)
Kouran - Kontini Drain (Id) @ 25 ° C 34A (Tc) 42A (Tc) 30A (Tc) 45A (Tc)
Founisè Aparèy pake TO-220 TO-220 TO-220 TO-220
Operating Tanperati -55°C ~ 150°C (TJ) 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Seri Automotive, AEC-Q101, MDmesh™ DM2 STripFET™ II MDmesh™ DM6 STripFET™ II
Nimewo pwodwi baz STP45 STP46 STP45 STP45N
Vgs (Max) ±25V ±20V ±25V ±16V

STP45N60DM2AG fich PDF

Download STP45N60DM2AG PDF fich ak dokiman STMicroelectronics pou STP45N60DM2AG - STMicroelectronics.

PCN konsepsyon/spesifikasyon
Mult Dev Adv Material Notice 8/Apr/2019.pdf
Asanble PCN/orijin
New Molding Compound 30/Aug/2019.pdf
Fich
STP45N60DM2AG.pdf

Shipment

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Sètifikasyon & Manm

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STP45N60DM2AG Image

STP45N60DM2AG

STMicroelectronics
32D-STP45N60DM2AG

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