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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleSTP62NS04Z
STP62NS04Z Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.
EKSPRIME OPSYON
Metòd Peman

STP62NS04Z - STMicroelectronics

Manifakti Nimewo Pati
STP62NS04Z
Manifakti
STMicroelectronics
Allelco Nimewo Pati
32D-STP62NS04Z
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 33V 62A TO220AB
Pake
TO-220-3
Done fèy
STP62NS04Z.pdf
RoHs Status
Sètifikasyon nou an
Nan stok: 43600

Jaden obligatwa yo endike pa yon asterisk (*)
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EKSPRIME OPSYON
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Sètifikasyon nou an

Espesifikasyon

Espesifikasyon STP62NS04Z Tech
STMicroelectronics - STP62NS04Z espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak STMicroelectronics - STP62NS04Z

Pwodwi atribi Valè atribi  
Manifakti STMicroelectronics  
Vgs (th) (Max) @ Id 4V @ 250µA  
Vgs (Max) Clamped  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-220  
Seri MESH OVERLAY™  
Rds Sou (Max) @ Id, Vgs 15mOhm @ 30A, 10V  
Dissipasyon pouvwa (Max) 110W (Tc)  
Pake / Ka TO-220-3  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 1330 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 47 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 33 V  
Kouran - Kontini Drain (Id) @ 25 ° C 62A (Tc)  
Nimewo pwodwi baz STP62  

Anviwònman & ekspòtasyon klasifikasyon

ATRIBI DESKRIPSYON
RoHs Status
Nivo sansiblite imidite (MSL) 1 (Unlimited)
Rive nan estati REACH Unaffected
ECCN EAR99
HTSUS

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou STMicroelectronics STP62NS04Z.

Pwodwi atribi STP62NS04Z STP65NF06 STP60NF06FP STP60NF10
Nimewo Pati STP62NS04Z STP65NF06 STP60NF06FP STP60NF10
Manifakti STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Founisè Aparèy pake TO-220 TO-220 TO-220FP TO-220
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 10V
Drenaj Sous Voltage (Vdss) 33 V 60 V 60 V 100 V
FET Feature - - - -
Nimewo pwodwi baz STP62 STP65N STP60 STP60
Pakèt Tube Tube Tube Tube
Kouran - Kontini Drain (Id) @ 25 ° C 62A (Tc) 60A (Tc) 30A (Tc) 80A (Tc)
Pake / Ka TO-220-3 TO-220-3 TO-220-3 Full Pack TO-220-3
Rds Sou (Max) @ Id, Vgs 15mOhm @ 30A, 10V 14mOhm @ 30A, 10V 16mOhm @ 30A, 10V 23mOhm @ 40A, 10V
Mounting Kalite Through Hole Through Hole Through Hole Through Hole
Vgs (th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Vgs (Max) Clamped ±20V ±20V ±20V
Kapasite Antre (Ciss) (Max) @ Vds 1330 pF @ 25 V 1700 pF @ 25 V 1810 pF @ 25 V 4270 pF @ 25 V
Dissipasyon pouvwa (Max) 110W (Tc) 110W (Tc) 30W (Tc) 300W (Tc)
Seri MESH OVERLAY™ STripFET™ II STripFET™ II STripFET™ II
Pòtay Charge (Qg) (Max) @ Vgs 47 nC @ 10 V 75 nC @ 10 V 66 nC @ 10 V 104 nC @ 10 V
Fèt tip N-Channel N-Channel N-Channel N-Channel
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -

STP62NS04Z fich PDF

Download STP62NS04Z PDF fich ak dokiman STMicroelectronics pou STP62NS04Z - STMicroelectronics.

PCN konsepsyon/spesifikasyon
Mult Dev Adv Material Notice 8/Apr/2019.pdf
Asanble PCN/orijin
Mult Dev Site Closure 13/Feb/2020.pdf
PCN anbalaj
Traceability 06/Mar/2017.pdf
Fich
STP62NS04Z.pdf
PCN obsolescence/ eol
EOL NOTICE 25/Jan/2023.pdf

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STP62NS04Z Image

STP62NS04Z

STMicroelectronics
32D-STP62NS04Z

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