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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Rèktifikateur - SingleSTPSC10H065D
STMicroelectronics
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

STPSC10H065D - STMicroelectronics

Manifakti Nimewo Pati
STPSC10H065D
Manifakti
STMicroelectronics
Allelco Nimewo Pati
32D-STPSC10H065D
ECAD modèl
Pati Deskripsyon
DIODE SIL CARB 650V 10A TO220AC
Deskripsyon detaye
Pake
TO-220-2
Done fèy
STPSC10H065.pdf
RoHs Status
Nan stok: 17742

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Espesifikasyon

Espesifikasyon STPSC10H065D Tech
STMicroelectronics - STPSC10H065D espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak STMicroelectronics - STPSC10H065D

Pwodwi atribi Valè atribi  
Manifakti STMicroelectronics  
Voltage - Forward (Vf) (Max) @ Si 1.75 V @ 10 A  
Voltage - DC ranvèse (Vr) (Max) 650 V  
Teknoloji SiC (Silicon Carbide) Schottky  
Founisè Aparèy pake TO-220AC  
Vitès No Recovery Time > 500mA (Io)  
Seri -  
Tan rekiperasyon ranvèse (trr) 0 ns  
Pwodwi atribi Valè atribi  
Pake / Ka TO-220-2  
Pakèt Tube  
Operating Tanperati - Junction -40°C ~ 175°C  
Mounting Kalite Through Hole  
Kouran - Reverse Leakage @ Vr 100 µA @ 650 V  
Kouran - Mwayèn Rectified (Io) 10A  
Kapasite @ Vr, F 480pF @ 0V, 1MHz  
Nimewo pwodwi baz STPSC10  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou STMicroelectronics STPSC10H065D.

Pwodwi atribi STPSC10H065D STPSC10H065G-TR STPS8L30DEE-TR STPSC10H065GY-TR
Nimewo Pati STPSC10H065D STPSC10H065G-TR STPS8L30DEE-TR STPSC10H065GY-TR
Manifakti STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Voltage - Forward (Vf) (Max) @ Si 1.75 V @ 10 A 1.75 V @ 10 A 500 mV @ 8 A 1.75 V @ 10 A
Operating Tanperati - Junction -40°C ~ 175°C -40°C ~ 175°C 150°C (Max) -40°C ~ 175°C
Pakèt Tube Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Vitès No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) Fast Recovery =< 500ns, > 200mA (Io) No Recovery Time > 500mA (Io)
Teknoloji SiC (Silicon Carbide) Schottky SiC (Silicon Carbide) Schottky Schottky SiC (Silicon Carbide) Schottky
Pake / Ka TO-220-2 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 8-PowerTDFN TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Kapasite @ Vr, F 480pF @ 0V, 1MHz 480pF @ 0V, 1MHz - 480pF @ 0V, 1MHz
Founisè Aparèy pake TO-220AC D²PAK PowerFlat™ (3.3x3.3) D²PAK
Kouran - Reverse Leakage @ Vr 100 µA @ 650 V 100 µA @ 650 V 1 mA @ 30 V 100 µA @ 650 V
Tan rekiperasyon ranvèse (trr) 0 ns 0 ns - 0 ns
Voltage - DC ranvèse (Vr) (Max) 650 V 650 V 30 V 650 V
Mounting Kalite Through Hole Surface Mount Surface Mount Surface Mount
Nimewo pwodwi baz STPSC10 STPSC10 STPS8 STPSC10
Seri - - - Automotive, AEC-Q101
Kouran - Mwayèn Rectified (Io) 10A 10A 8A 10A

STPSC10H065D fich PDF

Download STPSC10H065D PDF fich ak dokiman STMicroelectronics pou STPSC10H065D - STMicroelectronics.

PCN konsepsyon/spesifikasyon
Mult Dev Adv Material Notice 8/Apr/2019.pdf IPD/15/9230 11/May/2015.pdf
Asanble PCN/orijin
Manufacturing Extension 03/Jun/2021.pdf
Fich
STPSC10H065.pdf

Shipment

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Sètifikasyon & Manm

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STMicroelectronics

STPSC10H065D

STMicroelectronics
32D-STPSC10H065D

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