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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Rèktifikateur - SingleSTPSC6H065DI
STMicroelectronics
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

STPSC6H065DI - STMicroelectronics

Manifakti Nimewo Pati
STPSC6H065DI
Manifakti
STMicroelectronics
Allelco Nimewo Pati
32D-STPSC6H065DI
ECAD modèl
Pati Deskripsyon
DIODE SIC 650V 6A TO220AC INS
Deskripsyon detaye
Pake
TO-220-2 Insulated, TO-220AC
Done fèy
STPSC6H065.pdf
RoHs Status
Nan stok: 18232

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Kantite

Espesifikasyon

Espesifikasyon STPSC6H065DI Tech
STMicroelectronics - STPSC6H065DI espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak STMicroelectronics - STPSC6H065DI

Pwodwi atribi Valè atribi  
Manifakti STMicroelectronics  
Voltage - Forward (Vf) (Max) @ Si 1.75 V @ 6 A  
Voltage - DC ranvèse (Vr) (Max) 650 V  
Teknoloji SiC (Silicon Carbide) Schottky  
Founisè Aparèy pake TO-220AC ins  
Vitès Fast Recovery =< 500ns, > 200mA (Io)  
Seri -  
Pake / Ka TO-220-2 Insulated, TO-220AC  
Pwodwi atribi Valè atribi  
Pakèt Tube  
Operating Tanperati - Junction -40°C ~ 175°C  
Mounting Kalite Through Hole  
Kouran - Reverse Leakage @ Vr 60 µA @ 650 V  
Kouran - Mwayèn Rectified (Io) 6A  
Kapasite @ Vr, F -  
Nimewo pwodwi baz STPSC6  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou STMicroelectronics STPSC6H065DI.

Pwodwi atribi STPSC6H065DI STPSC6H065G-TR STPSC6H12B-TR1 STPSC8H065B-TR
Nimewo Pati STPSC6H065DI STPSC6H065G-TR STPSC6H12B-TR1 STPSC8H065B-TR
Manifakti STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Kouran - Reverse Leakage @ Vr 60 µA @ 650 V 60 µA @ 650 V 400 µA @ 1200 V 80 µA @ 650 V
Voltage - DC ranvèse (Vr) (Max) 650 V 650 V 1200 V 650 V
Kouran - Mwayèn Rectified (Io) 6A 6A 6A 8A
Nimewo pwodwi baz STPSC6 STPSC6 STPSC6 STPSC8
Founisè Aparèy pake TO-220AC ins D²PAK DPAK DPAK
Vitès Fast Recovery =< 500ns, > 200mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Pake / Ka TO-220-2 Insulated, TO-220AC TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Kalite Through Hole Surface Mount Surface Mount Surface Mount
Kapasite @ Vr, F - 300pF @ 0V, 1MHz 330pF @ 0V, 1MHz 414pF @ 0V, 1MHz
Seri - - - -
Operating Tanperati - Junction -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C
Teknoloji SiC (Silicon Carbide) Schottky SiC (Silicon Carbide) Schottky SiC (Silicon Carbide) Schottky SiC (Silicon Carbide) Schottky
Pakèt Tube Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ Si 1.75 V @ 6 A 1.75 V @ 6 A 1.9 V @ 6 A 1.75 V @ 8 A

STPSC6H065DI fich PDF

Download STPSC6H065DI PDF fich ak dokiman STMicroelectronics pou STPSC6H065DI - STMicroelectronics.

PCN konsepsyon/spesifikasyon
IPD/15/9230 11/May/2015.pdf
Asanble PCN/orijin
Manufacturing Extension 03/Jun/2021.pdf
Fich
STPSC6H065.pdf

Shipment

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Sètifikasyon & Manm

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STMicroelectronics

STPSC6H065DI

STMicroelectronics
32D-STPSC6H065DI

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