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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Rèktifikateur - SingleSTPSC806D
STMicroelectronics
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

STPSC806D - STMicroelectronics

Manifakti Nimewo Pati
STPSC806D
Manifakti
STMicroelectronics
Allelco Nimewo Pati
32D-STPSC806D
ECAD modèl
Pati Deskripsyon
DIODE SIL CARB 600V 8A TO220AC
Deskripsyon detaye
Pake
TO-220-2
Done fèy
STPSC806D.pdf
RoHs Status
Nan stok: 4060

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon STPSC806D Tech
STMicroelectronics - STPSC806D espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak STMicroelectronics - STPSC806D

Pwodwi atribi Valè atribi  
Manifakti STMicroelectronics  
Voltage - Forward (Vf) (Max) @ Si 1.7 V @ 8 A  
Voltage - DC ranvèse (Vr) (Max) 600 V  
Teknoloji SiC (Silicon Carbide) Schottky  
Founisè Aparèy pake TO-220AC  
Vitès No Recovery Time > 500mA (Io)  
Seri -  
Tan rekiperasyon ranvèse (trr) 0 ns  
Pwodwi atribi Valè atribi  
Pake / Ka TO-220-2  
Pakèt Tube  
Operating Tanperati - Junction -40°C ~ 175°C  
Mounting Kalite Through Hole  
Kouran - Reverse Leakage @ Vr 100 µA @ 600 V  
Kouran - Mwayèn Rectified (Io) 8A  
Kapasite @ Vr, F 450pF @ 0V, 1MHz  
Nimewo pwodwi baz STPSC806  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou STMicroelectronics STPSC806D.

Pwodwi atribi STPSC806D STPSC8H065D STPSC6H065D STPSC8H065G2Y-TR
Nimewo Pati STPSC806D STPSC8H065D STPSC6H065D STPSC8H065G2Y-TR
Manifakti STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Founisè Aparèy pake TO-220AC TO-220AC TO-220AC D2PAK HV
Voltage - DC ranvèse (Vr) (Max) 600 V 650 V 650 V 650 V
Vitès No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Voltage - Forward (Vf) (Max) @ Si 1.7 V @ 8 A 1.75 V @ 8 A 1.75 V @ 6 A 1.65 V @ 8 A
Mounting Kalite Through Hole Through Hole Through Hole Surface Mount
Kouran - Reverse Leakage @ Vr 100 µA @ 600 V 80 µA @ 650 V 60 µA @ 650 V 80 µA @ 650 V
Nimewo pwodwi baz STPSC806 STPSC8 STPSC6 STPSC8
Operating Tanperati - Junction -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C
Kouran - Mwayèn Rectified (Io) 8A 8A 6A 8A
Kapasite @ Vr, F 450pF @ 0V, 1MHz 414pF @ 0V, 1MHz 300pF @ 0V, 1MHz 414pF @ 0V, 1MHz
Pakèt Tube Tube Tube Tape & Reel (TR)
Seri - - - Automotive, AEC-Q101, ECOPACK®2
Pake / Ka TO-220-2 TO-220-2 TO-220-2 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Teknoloji SiC (Silicon Carbide) Schottky SiC (Silicon Carbide) Schottky SiC (Silicon Carbide) Schottky SiC (Silicon Carbide) Schottky
Tan rekiperasyon ranvèse (trr) 0 ns 0 ns 0 ns 0 ns

STPSC806D fich PDF

Download STPSC806D PDF fich ak dokiman STMicroelectronics pou STPSC806D - STMicroelectronics.

PCN anbalaj
Box Label Chg 28/Jul/2016.pdf
PCN konsepsyon/spesifikasyon
Mult Dev Adv Material Notice 8/Apr/2019.pdf
Asanble PCN/orijin
Epitaxy Site Addition 20/Apr/2015.pdf

Shipment

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Sètifikasyon & Manm

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STMicroelectronics

STPSC806D

STMicroelectronics
32D-STPSC806D

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