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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Rèktifikateur - SingleSTPSC8H065DLF
STMicroelectronics
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

STPSC8H065DLF - STMicroelectronics

Manifakti Nimewo Pati
STPSC8H065DLF
Manifakti
STMicroelectronics
Allelco Nimewo Pati
32D-STPSC8H065DLF
ECAD modèl
Pati Deskripsyon
DIODE SIL CARB 650V 8A POWERFLAT
Deskripsyon detaye
Pake
8-PowerVDFN
Done fèy
STPSC8H065DLF Datasheet.pdf
RoHs Status
Nan stok: 19719

Jaden obligatwa yo endike pa yon asterisk (*)
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Espesifikasyon

Espesifikasyon STPSC8H065DLF Tech
STMicroelectronics - STPSC8H065DLF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak STMicroelectronics - STPSC8H065DLF

Pwodwi atribi Valè atribi  
Manifakti STMicroelectronics  
Voltage - Forward (Vf) (Max) @ Si 1.55 V @ 8 A  
Voltage - DC ranvèse (Vr) (Max) 650 V  
Teknoloji SiC (Silicon Carbide) Schottky  
Founisè Aparèy pake PowerFlat™ (8x8) HV  
Vitès No Recovery Time > 500mA (Io)  
Seri ECOPACK®2  
Tan rekiperasyon ranvèse (trr) 0 ns  
Pwodwi atribi Valè atribi  
Pake / Ka 8-PowerVDFN  
Pakèt Tape & Reel (TR)  
Operating Tanperati - Junction -40°C ~ 175°C  
Mounting Kalite Surface Mount  
Kouran - Reverse Leakage @ Vr 80 µA @ 650 V  
Kouran - Mwayèn Rectified (Io) 8A  
Kapasite @ Vr, F 460pF @ 0V, 1MHz  
Nimewo pwodwi baz STPSC8  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou STMicroelectronics STPSC8H065DLF.

Pwodwi atribi STPSC8H065DLF STPSC8H065D STPSC8H065G-TR STPSC6H12B-TR1
Nimewo Pati STPSC8H065DLF STPSC8H065D STPSC8H065G-TR STPSC6H12B-TR1
Manifakti STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Founisè Aparèy pake PowerFlat™ (8x8) HV TO-220AC D²PAK DPAK
Seri ECOPACK®2 - - -
Vitès No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Kouran - Mwayèn Rectified (Io) 8A 8A 8A 6A
Pake / Ka 8-PowerVDFN TO-220-2 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Kalite Surface Mount Through Hole Surface Mount Surface Mount
Kapasite @ Vr, F 460pF @ 0V, 1MHz 414pF @ 0V, 1MHz 414pF @ 0V, 1MHz 330pF @ 0V, 1MHz
Teknoloji SiC (Silicon Carbide) Schottky SiC (Silicon Carbide) Schottky SiC (Silicon Carbide) Schottky SiC (Silicon Carbide) Schottky
Kouran - Reverse Leakage @ Vr 80 µA @ 650 V 80 µA @ 650 V 80 µA @ 650 V 400 µA @ 1200 V
Tan rekiperasyon ranvèse (trr) 0 ns 0 ns 0 ns 0 ns
Voltage - Forward (Vf) (Max) @ Si 1.55 V @ 8 A 1.75 V @ 8 A 1.75 V @ 8 A 1.9 V @ 6 A
Nimewo pwodwi baz STPSC8 STPSC8 STPSC8 STPSC6
Voltage - DC ranvèse (Vr) (Max) 650 V 650 V 650 V 1200 V
Operating Tanperati - Junction -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C
Pakèt Tape & Reel (TR) Tube Tape & Reel (TR) Tape & Reel (TR)

STPSC8H065DLF fich PDF

Download STPSC8H065DLF PDF fich ak dokiman STMicroelectronics pou STPSC8H065DLF - STMicroelectronics.

Asanble PCN/orijin
Manufacturing Extension 03/Jun/2021.pdf
Fich
STPSC8H065DLF Datasheet.pdf

Shipment

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Sètifikasyon & Manm

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STMicroelectronics

STPSC8H065DLF

STMicroelectronics
32D-STPSC8H065DLF

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