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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleSTQ1NK80ZR-AP
STQ1NK80ZR-AP Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

STQ1NK80ZR-AP - STMicroelectronics

Manifakti Nimewo Pati
STQ1NK80ZR-AP
Manifakti
STMicroelectronics
Allelco Nimewo Pati
32D-STQ1NK80ZR-AP
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 800V 300MA TO92-3
Deskripsyon detaye
Pake
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Done fèy
STx1NK80ZR(R-AP,-1).pdf
RoHs Status
Nan stok: 108510

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon STQ1NK80ZR-AP Tech
STMicroelectronics - STQ1NK80ZR-AP espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak STMicroelectronics - STQ1NK80ZR-AP

Pwodwi atribi Valè atribi  
Manifakti STMicroelectronics  
Vgs (th) (Max) @ Id 4.5V @ 50µA  
Vgs (Max) ±30V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-92-3  
Seri SuperMESH™  
Rds Sou (Max) @ Id, Vgs 16Ohm @ 500mA, 10V  
Dissipasyon pouvwa (Max) 3W (Tc)  
Pake / Ka TO-226-3, TO-92-3 (TO-226AA) Formed Leads  
Pakèt Cut Tape (CT)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 160 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 7.7 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 800 V  
Kouran - Kontini Drain (Id) @ 25 ° C 300mA (Tc)  
Nimewo pwodwi baz STQ1NK80  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou STMicroelectronics STQ1NK80ZR-AP.

Pwodwi atribi STQ1NK80ZR-AP STQ3N45K3-AP STQ2HNK60ZR-AP STQ2NK60ZR-AP
Nimewo Pati STQ1NK80ZR-AP STQ3N45K3-AP STQ2HNK60ZR-AP STQ2NK60ZR-AP
Manifakti STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Pake / Ka TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Kouran - Kontini Drain (Id) @ 25 ° C 300mA (Tc) 600mA (Tc) 500mA (Tc) 400mA (Tc)
Mounting Kalite Through Hole Through Hole Through Hole Through Hole
Dissipasyon pouvwa (Max) 3W (Tc) 3W (Tc) 3W (Tc) 3W (Tc)
Drenaj Sous Voltage (Vdss) 800 V 450 V 600 V 600 V
Pòtay Charge (Qg) (Max) @ Vgs 7.7 nC @ 10 V 6 nC @ 10 V 15 nC @ 10 V 10 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V
FET Feature - - - -
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Nimewo pwodwi baz STQ1NK80 STQ3 STQ2HNK60 STQ2
Founisè Aparèy pake TO-92-3 TO-92-3 TO-92-3 TO-92-3
Kapasite Antre (Ciss) (Max) @ Vds 160 pF @ 25 V 150 pF @ 25 V 280 pF @ 25 V 170 pF @ 25 V
Seri SuperMESH™ SuperMESH3™ SuperMESH™ SuperMESH™
Pakèt Cut Tape (CT) Cut Tape (CT) Cut Tape (CT) Cut Tape (CT)
Fèt tip N-Channel N-Channel N-Channel N-Channel
Vgs (th) (Max) @ Id 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA
Rds Sou (Max) @ Id, Vgs 16Ohm @ 500mA, 10V 3.8Ohm @ 500mA, 10V 4.8Ohm @ 1A, 10V 8Ohm @ 700mA, 10V
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 10V
Operating Tanperati -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)

STQ1NK80ZR-AP fich PDF

Download STQ1NK80ZR-AP PDF fich ak dokiman STMicroelectronics pou STQ1NK80ZR-AP - STMicroelectronics.

PCN konsepsyon/spesifikasyon
Mult Dev Adv Material Notice 8/Apr/2019.pdf
Asanble PCN/orijin
New molding compound 11/Jul/2019.pdf
Fich
STx1NK80ZR(R-AP,-1).pdf

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STQ1NK80ZR-AP Image

STQ1NK80ZR-AP

STMicroelectronics
32D-STQ1NK80ZR-AP

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