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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleSTS12NF30L
STS12NF30L Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

STS12NF30L - STMicroelectronics

Manifakti Nimewo Pati
STS12NF30L
Manifakti
STMicroelectronics
Allelco Nimewo Pati
32D-STS12NF30L
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 30V 12A 8SO
Deskripsyon detaye
Pake
8-SOIC (0.154", 3.90mm Width)
Done fèy
STS12NF30L.pdf
RoHs Status
Nan stok: 5310

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Espesifikasyon

Espesifikasyon STS12NF30L Tech
STMicroelectronics - STS12NF30L espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak STMicroelectronics - STS12NF30L

Pwodwi atribi Valè atribi  
Manifakti STMicroelectronics  
Vgs (th) (Max) @ Id 1V @ 250µA  
Vgs (Max) ±16V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-SOIC  
Seri STripFET™ II  
Rds Sou (Max) @ Id, Vgs 9mOhm @ 6A, 10V  
Dissipasyon pouvwa (Max) 2.5W (Ta)  
Pake / Ka 8-SOIC (0.154", 3.90mm Width)  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 2400 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 50 nC @ 4.5 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V  
Drenaj Sous Voltage (Vdss) 30 V  
Kouran - Kontini Drain (Id) @ 25 ° C 12A (Tc)  
Nimewo pwodwi baz STS12  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou STMicroelectronics STS12NF30L.

Pwodwi atribi STS12NF30L STS10PF30L STS10P4LLF6 STS17NH3LL
Nimewo Pati STS12NF30L STS10PF30L STS10P4LLF6 STS17NH3LL
Manifakti STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Dissipasyon pouvwa (Max) 2.5W (Ta) 2.5W (Tc) 2.7W (Ta) 2.7W (Tc)
Founisè Aparèy pake 8-SOIC 8-SOIC 8-SOIC 8-SOIC
Operating Tanperati 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Fèt tip N-Channel P-Channel P-Channel N-Channel
Vgs (Max) ±16V ±16V ±20V ±16V
Kouran - Kontini Drain (Id) @ 25 ° C 12A (Tc) 10A (Tc) 10A (Ta) 17A (Tc)
Pòtay Charge (Qg) (Max) @ Vgs 50 nC @ 4.5 V 39 nC @ 4.5 V 34 nC @ 4.5 V 24 nC @ 4.5 V
Seri STripFET™ II STripFET™ II STripFET™ F6 STripFET™
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
FET Feature - - - -
Kapasite Antre (Ciss) (Max) @ Vds 2400 pF @ 25 V 2300 pF @ 25 V 3525 pF @ 25 V 1810 pF @ 25 V
Rds Sou (Max) @ Id, Vgs 9mOhm @ 6A, 10V 14mOhm @ 5A, 10V 15mOhm @ 3A, 10V 5.7mOhm @ 8.5A, 10V
Nimewo pwodwi baz STS12 STS10 STS10 STS17
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Vgs (th) (Max) @ Id 1V @ 250µA 1V @ 250µA 1V @ 250µA (Min) 1V @ 250µA
Drenaj Sous Voltage (Vdss) 30 V 30 V 40 V 30 V
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Pake / Ka 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V

STS12NF30L fich PDF

Download STS12NF30L PDF fich ak dokiman STMicroelectronics pou STS12NF30L - STMicroelectronics.

PCN obsolescence/ eol
IPD/15/9345 04/Aug/2015.pdf

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STS12NF30L Image

STS12NF30L

STMicroelectronics
32D-STS12NF30L

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