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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleSTU2NK100Z
STU2NK100Z Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

STU2NK100Z - STMicroelectronics

Manifakti Nimewo Pati
STU2NK100Z
Manifakti
STMicroelectronics
Allelco Nimewo Pati
32D-STU2NK100Z
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 1000V 1.85A IPAK
Deskripsyon detaye
Pake
TO-251-3 Short Leads, IPak, TO-251AA
Done fèy
STx2NK100Z.pdf
RoHs Status
Nan stok: 20517

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon STU2NK100Z Tech
STMicroelectronics - STU2NK100Z espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak STMicroelectronics - STU2NK100Z

Pwodwi atribi Valè atribi  
Manifakti STMicroelectronics  
Vgs (th) (Max) @ Id 4.5V @ 50µA  
Vgs (Max) ±30V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake I-PAK  
Seri SuperMESH™  
Rds Sou (Max) @ Id, Vgs 8.5Ohm @ 900mA, 10V  
Dissipasyon pouvwa (Max) 70W (Tc)  
Pake / Ka TO-251-3 Short Leads, IPak, TO-251AA  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 499 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 16 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 1000 V  
Kouran - Kontini Drain (Id) @ 25 ° C 1.85A (Tc)  
Nimewo pwodwi baz STU2NK100  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou STMicroelectronics STU2NK100Z.

Pwodwi atribi STU2NK100Z STU2N80K5 STU2LN60K3 STU2N105K5
Nimewo Pati STU2NK100Z STU2N80K5 STU2LN60K3 STU2N105K5
Manifakti STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
FET Feature - - - -
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Kouran - Kontini Drain (Id) @ 25 ° C 1.85A (Tc) 2A (Tc) 2A (Tc) 1.5A (Tc)
Drenaj Sous Voltage (Vdss) 1000 V 800 V 600 V 1050 V
Founisè Aparèy pake I-PAK TO-251 (IPAK) TO-251 (IPAK) TO-251 (IPAK)
Pake / Ka TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA
Rds Sou (Max) @ Id, Vgs 8.5Ohm @ 900mA, 10V 4.5Ohm @ 1A, 10V 4.5Ohm @ 1A, 10V 8Ohm @ 750mA, 10V
Pakèt Tube Tube Tube Tube
Kapasite Antre (Ciss) (Max) @ Vds 499 pF @ 25 V 105 pF @ 100 V 235 pF @ 50 V 115 pF @ 100 V
Fèt tip N-Channel N-Channel N-Channel N-Channel
Vgs (Max) ±30V 30V ±30V ±30V
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 10V
Vgs (th) (Max) @ Id 4.5V @ 50µA 5V @ 100µA 4.5V @ 50µA 5V @ 100µA
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Seri SuperMESH™ SuperMESH5™ SuperMESH3™ MDmesh™ K5
Mounting Kalite Through Hole Through Hole Through Hole Through Hole
Dissipasyon pouvwa (Max) 70W (Tc) 45W (Tc) 45W (Tc) 60W (Tc)
Nimewo pwodwi baz STU2NK100 STU2N80 STU2LN60 STU2N105
Pòtay Charge (Qg) (Max) @ Vgs 16 nC @ 10 V 9.5 nC @ 10 V 12 nC @ 10 V 10 nC @ 10 V

STU2NK100Z fich PDF

Download STU2NK100Z PDF fich ak dokiman STMicroelectronics pou STU2NK100Z - STMicroelectronics.

PCN anbalaj
Mult Dev Inner Box Chg 9/Dec/2021.pdf
Fich
STx2NK100Z.pdf
Asanble PCN/orijin
Assembly Site 22/Nov/2022.pdf

Shipment

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STU2NK100Z Image

STU2NK100Z

STMicroelectronics
32D-STU2NK100Z

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