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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleSTU8N80K5
STU8N80K5 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

STU8N80K5 - STMicroelectronics

Manifakti Nimewo Pati
STU8N80K5
Manifakti
STMicroelectronics
Allelco Nimewo Pati
32D-STU8N80K5
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 800V 6A TO251
Deskripsyon detaye
Pake
TO-251-3 Short Leads, IPak, TO-251AA
Done fèy
STP8N80K5, STU8N80K5.pdf
RoHs Status
Nan stok: 33788

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon STU8N80K5 Tech
STMicroelectronics - STU8N80K5 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak STMicroelectronics - STU8N80K5

Pwodwi atribi Valè atribi  
Manifakti STMicroelectronics  
Vgs (th) (Max) @ Id 5V @ 100µA  
Vgs (Max) ±30V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-251 (IPAK)  
Seri SuperMESH5™  
Rds Sou (Max) @ Id, Vgs 950mOhm @ 3A, 10V  
Dissipasyon pouvwa (Max) 110W (Tc)  
Pake / Ka TO-251-3 Short Leads, IPak, TO-251AA  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 450 pF @ 100 V  
Pòtay Charge (Qg) (Max) @ Vgs 16.5 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 800 V  
Kouran - Kontini Drain (Id) @ 25 ° C 6A (Tc)  
Nimewo pwodwi baz STU8N80  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou STMicroelectronics STU8N80K5.

Pwodwi atribi STU8N80K5 STU8NM50N STU90N4F3 STU85N3LH5
Nimewo Pati STU8N80K5 STU8NM50N STU90N4F3 STU85N3LH5
Manifakti STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Operating Tanperati -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 175°C (TJ) 175°C (TJ)
Pakèt Tube Tube Tube Tube
Nimewo pwodwi baz STU8N80 STU8N STU90 STU85
Drenaj Sous Voltage (Vdss) 800 V 500 V 40 V 30 V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 5V, 10V
Vgs (th) (Max) @ Id 5V @ 100µA 4V @ 250µA 4V @ 250µA 2.5V @ 250µA
Seri SuperMESH5™ MDmesh™ II STripFET™ III STripFET™ V
Founisè Aparèy pake TO-251 (IPAK) I-PAK I-PAK TO-251 (IPAK)
Rds Sou (Max) @ Id, Vgs 950mOhm @ 3A, 10V 790mOhm @ 2.5A, 10V 6.5mOhm @ 40A, 10V 5.4mOhm @ 40A, 10V
Vgs (Max) ±30V ±25V ±20V ±22V
Kapasite Antre (Ciss) (Max) @ Vds 450 pF @ 100 V 364 pF @ 50 V 2200 pF @ 25 V 1850 pF @ 25 V
Dissipasyon pouvwa (Max) 110W (Tc) 45W (Tc) 110W (Tc) 70W (Tc)
Pòtay Charge (Qg) (Max) @ Vgs 16.5 nC @ 10 V 14 nC @ 10 V 54 nC @ 10 V 14 nC @ 5 V
Fèt tip N-Channel N-Channel N-Channel N-Channel
Mounting Kalite Through Hole Through Hole Through Hole Through Hole
Pake / Ka TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA
FET Feature - - - -
Kouran - Kontini Drain (Id) @ 25 ° C 6A (Tc) 5A (Tc) 80A (Tc) 80A (Tc)

STU8N80K5 fich PDF

Download STU8N80K5 PDF fich ak dokiman STMicroelectronics pou STU8N80K5 - STMicroelectronics.

PCN anbalaj
Mult Dev Inner Box Chg 9/Dec/2021.pdf
PCN obsolescence/ eol
Mult Dev OBS 3/Jul/2020.pdf Mult Dev Reinstate 6/Aug/2020.pdf
Asanble PCN/orijin
Assembly Site 22/Nov/2022.pdf
Fich
STP8N80K5, STU8N80K5.pdf

Shipment

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Sètifikasyon & Manm

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STU8N80K5 Image

STU8N80K5

STMicroelectronics
32D-STU8N80K5

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