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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleSTW33N60M2
STW33N60M2 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

STW33N60M2 - STMicroelectronics

Manifakti Nimewo Pati
STW33N60M2
Manifakti
STMicroelectronics
Allelco Nimewo Pati
32D-STW33N60M2
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 600V 26A TO247
Deskripsyon detaye
Pake
TO-247-3
Done fèy
STx33N60M2.pdf
RoHs Status
Nan stok: 15891

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Espesifikasyon

Espesifikasyon STW33N60M2 Tech
STMicroelectronics - STW33N60M2 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak STMicroelectronics - STW33N60M2

Pwodwi atribi Valè atribi  
Manifakti STMicroelectronics  
Vgs (th) (Max) @ Id 4V @ 250µA  
Vgs (Max) ±25V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-247-3  
Seri MDmesh™ II Plus  
Rds Sou (Max) @ Id, Vgs 125mOhm @ 13A, 10V  
Dissipasyon pouvwa (Max) 190W (Tc)  
Pake / Ka TO-247-3  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 1781 pF @ 100 V  
Pòtay Charge (Qg) (Max) @ Vgs 45.5 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 600 V  
Kouran - Kontini Drain (Id) @ 25 ° C 26A (Tc)  
Nimewo pwodwi baz STW33  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou STMicroelectronics STW33N60M2.

Pwodwi atribi STW33N60M2 STW34N65M5 STW32N65M5 STW32NM50N
Nimewo Pati STW33N60M2 STW34N65M5 STW32N65M5 STW32NM50N
Manifakti STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Kouran - Kontini Drain (Id) @ 25 ° C 26A (Tc) 28A (Tc) 24A (Tc) 22A (Tc)
Pòtay Charge (Qg) (Max) @ Vgs 45.5 nC @ 10 V 62.5 nC @ 10 V 72 nC @ 10 V 62.5 nC @ 10 V
Pakèt Tube Tube Tube Tube
Pake / Ka TO-247-3 TO-247-3 TO-247-3 TO-247-3
Drenaj Sous Voltage (Vdss) 600 V 650 V 650 V 500 V
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 10V
Operating Tanperati -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Nimewo pwodwi baz STW33 STW34 STW32N STW32
Vgs (th) (Max) @ Id 4V @ 250µA 5V @ 250µA 5V @ 250µA 4V @ 250µA
Founisè Aparèy pake TO-247-3 TO-247-3 TO-247-3 TO-247-3
Vgs (Max) ±25V ±25V ±25V ±25V
Mounting Kalite Through Hole Through Hole Through Hole Through Hole
FET Feature - - - -
Kapasite Antre (Ciss) (Max) @ Vds 1781 pF @ 100 V 2700 pF @ 100 V 3320 pF @ 100 V 1973 pF @ 50 V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Fèt tip N-Channel N-Channel N-Channel N-Channel
Seri MDmesh™ II Plus MDmesh™ V MDmesh™ V MDmesh™ II
Dissipasyon pouvwa (Max) 190W (Tc) 190W (Tc) 150W (Tc) 190W (Tc)
Rds Sou (Max) @ Id, Vgs 125mOhm @ 13A, 10V 110mOhm @ 14A, 10V 119mOhm @ 12A, 10V 130mOhm @ 11A, 10V

STW33N60M2 fich PDF

Download STW33N60M2 PDF fich ak dokiman STMicroelectronics pou STW33N60M2 - STMicroelectronics.

PCN konsepsyon/spesifikasyon
Mult Dev Adv Material Notice 8/Apr/2019.pdf STx33N60M2 Datasheet Chg 31/May/2019.pdf
Asanble PCN/orijin
IPG/14/8475 16/May/2014.pdf
Fich
STx33N60M2.pdf

Shipment

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Sètifikasyon & Manm

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STW33N60M2 Image

STW33N60M2

STMicroelectronics
32D-STW33N60M2

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