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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleSTW58N65DM2AG
STW58N65DM2AG Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

STW58N65DM2AG - STMicroelectronics

Manifakti Nimewo Pati
STW58N65DM2AG
Manifakti
STMicroelectronics
Allelco Nimewo Pati
32D-STW58N65DM2AG
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 650V 48A TO247
Deskripsyon detaye
Pake
TO-247-3
Done fèy
STW58N65DM2AG.pdf
RoHs Status
Nan stok: 4319

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Espesifikasyon

Espesifikasyon STW58N65DM2AG Tech
STMicroelectronics - STW58N65DM2AG espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak STMicroelectronics - STW58N65DM2AG

Pwodwi atribi Valè atribi  
Manifakti STMicroelectronics  
Vgs (th) (Max) @ Id 5V @ 250µA  
Vgs (Max) ±25V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-247-3  
Seri Automotive, AEC-Q101, MDmesh™ DM2  
Rds Sou (Max) @ Id, Vgs 65mOhm @ 24A, 10V  
Dissipasyon pouvwa (Max) 360W (Tc)  
Pake / Ka TO-247-3  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 4100 pF @ 100 V  
Pòtay Charge (Qg) (Max) @ Vgs 88 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 650 V  
Kouran - Kontini Drain (Id) @ 25 ° C 48A (Tc)  
Nimewo pwodwi baz STW58  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou STMicroelectronics STW58N65DM2AG.

Pwodwi atribi STW58N65DM2AG STW57N65M5 STW56N65M2-4 STW56NM60N
Nimewo Pati STW58N65DM2AG STW57N65M5 STW56N65M2-4 STW56NM60N
Manifakti STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Nimewo pwodwi baz STW58 STW57 STW56 STW56N
Pake / Ka TO-247-3 TO-247-3 TO-247-4 TO-247-3
Fèt tip N-Channel N-Channel N-Channel N-Channel
Mounting Kalite Through Hole Through Hole Through Hole Through Hole
Drenaj Sous Voltage (Vdss) 650 V 650 V 650 V 600 V
Kapasite Antre (Ciss) (Max) @ Vds 4100 pF @ 100 V 4200 pF @ 100 V 3900 pF @ 100 V 4800 pF @ 50 V
Kouran - Kontini Drain (Id) @ 25 ° C 48A (Tc) 42A (Tc) 49A (Tc) 45A (Tc)
Vgs (Max) ±25V ±25V ±25V ±25V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Operating Tanperati -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Dissipasyon pouvwa (Max) 360W (Tc) 250W (Tc) 358W (Tc) 300W (Tc)
Pòtay Charge (Qg) (Max) @ Vgs 88 nC @ 10 V 98 nC @ 10 V 93 nC @ 10 V 150 nC @ 10 V
FET Feature - - - -
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 10V
Vgs (th) (Max) @ Id 5V @ 250µA 5V @ 250µA 4V @ 250µA 4V @ 250µA
Founisè Aparèy pake TO-247-3 TO-247-3 TO-247-4 TO-247-3
Pakèt Tube Tube Tube Tube
Rds Sou (Max) @ Id, Vgs 65mOhm @ 24A, 10V 63mOhm @ 21A, 10V 62mOhm @ 24.5A, 10V 60mOhm @ 22.5A, 10V
Seri Automotive, AEC-Q101, MDmesh™ DM2 MDmesh™ V MDmesh™ M2 MDmesh™ II

STW58N65DM2AG fich PDF

Download STW58N65DM2AG PDF fich ak dokiman STMicroelectronics pou STW58N65DM2AG - STMicroelectronics.

PCN konsepsyon/spesifikasyon
Mult Dev Adv Material Notice 8/Apr/2019.pdf
Asanble PCN/orijin
Mult Dev Assembly Chg 19/Dec/2018.pdf
Fich
STW58N65DM2AG.pdf

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STW58N65DM2AG

STMicroelectronics
32D-STW58N65DM2AG

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