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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleSTY100NS20FD
STMicroelectronics
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.
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STY100NS20FD - STMicroelectronics

Manifakti Nimewo Pati
STY100NS20FD
Manifakti
STMicroelectronics
Allelco Nimewo Pati
32D-STY100NS20FD
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 200V 100A MAX247
Pake
TO-247-3
Done fèy
STY100NS20FD.pdf
RoHs Status
Sètifikasyon nou an
Nan stok: 5220

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Sètifikasyon nou an

Espesifikasyon

Espesifikasyon STY100NS20FD Tech
STMicroelectronics - STY100NS20FD espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak STMicroelectronics - STY100NS20FD

Pwodwi atribi Valè atribi  
Manifakti STMicroelectronics  
Vgs (th) (Max) @ Id 4V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake MAX247™  
Seri MESH OVERLAY™  
Rds Sou (Max) @ Id, Vgs 24mOhm @ 50A, 10V  
Dissipasyon pouvwa (Max) 450W (Tc)  
Pake / Ka TO-247-3  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati 150°C (TJ)  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 7900 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 360 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 200 V  
Kouran - Kontini Drain (Id) @ 25 ° C 100A (Tc)  
Nimewo pwodwi baz STY100  

Anviwònman & ekspòtasyon klasifikasyon

ATRIBI DESKRIPSYON
RoHs Status
Nivo sansiblite imidite (MSL) 1 (Unlimited)
Rive nan estati REACH Unaffected
ECCN EAR99
HTSUS

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou STMicroelectronics STY100NS20FD.

Pwodwi atribi STY100NS20FD STY34NB50 STY145N65M5 STY60NM50
Nimewo Pati STY100NS20FD STY34NB50 STY145N65M5 STY60NM50
Manifakti STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Mounting Kalite Through Hole Through Hole Through Hole Through Hole
Kouran - Kontini Drain (Id) @ 25 ° C 100A (Tc) 34A (Tc) 138A (Tc) 60A (Tc)
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Vgs (th) (Max) @ Id 4V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Operating Tanperati 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Kapasite Antre (Ciss) (Max) @ Vds 7900 pF @ 25 V 9100 pF @ 25 V 18500 pF @ 100 V 7500 pF @ 25 V
Pake / Ka TO-247-3 TO-247-3 TO-247-3 TO-247-3
Vgs (Max) ±20V ±30V ±25V ±30V
Founisè Aparèy pake MAX247™ MAX247™ MAX247™ MAX247™
FET Feature - - - -
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 10V
Fèt tip N-Channel N-Channel N-Channel N-Channel
Rds Sou (Max) @ Id, Vgs 24mOhm @ 50A, 10V 130mOhm @ 17A, 10V 15mOhm @ 69A, 10V 50mOhm @ 30A, 10V
Drenaj Sous Voltage (Vdss) 200 V 500 V 650 V 500 V
Pakèt Tube Tube Tube Tube
Seri MESH OVERLAY™ PowerMESH™ MDmesh™ V MDmesh™
Pòtay Charge (Qg) (Max) @ Vgs 360 nC @ 10 V 223 nC @ 10 V 414 nC @ 10 V 266 nC @ 10 V
Dissipasyon pouvwa (Max) 450W (Tc) 450W (Tc) 625W (Tc) 560W (Tc)
Nimewo pwodwi baz STY100 STY34N STY145 STY60

STY100NS20FD fich PDF

Download STY100NS20FD PDF fich ak dokiman STMicroelectronics pou STY100NS20FD - STMicroelectronics.

Fich
STY100NS20FD.pdf

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STMicroelectronics

STY100NS20FD

STMicroelectronics
32D-STY100NS20FD

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