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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Bridge rèktifikateurGBU15L06
GBU15L06 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.
EKSPRIME OPSYON
Metòd Peman

GBU15L06 - Taiwan Semiconductor Corporation

Manifakti Nimewo Pati
GBU15L06
Manifakti
Taiwan Semiconductor
Allelco Nimewo Pati
32D-GBU15L06
ECAD modèl
Pati Deskripsyon
BRIDGE RECT 1PHASE 800V 15A GBU
Pake
4-SIP, GBU
Done fèy
GBU15L05, GBU15L06.pdf
RoHs Status
Sètifikasyon nou an
Nan stok: 16705

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite
EKSPRIME OPSYON
Metòd Peman
Sètifikasyon nou an

Espesifikasyon

Espesifikasyon GBU15L06 Tech
Taiwan Semiconductor Corporation - GBU15L06 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Taiwan Semiconductor Corporation - GBU15L06

Pwodwi atribi Valè atribi  
Manifakti Taiwan Semiconductor  
Voltage - Peak Ranvèse (Max) 800 V  
Voltage - Forward (Vf) (Max) @ Si 960 mV @ 7.5 A  
Teknoloji Standard  
Founisè Aparèy pake GBU  
Seri -  
Pake / Ka 4-SIP, GBU  
Pwodwi atribi Valè atribi  
Pakèt Tube  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Through Hole  
Kalite dyod Single Phase  
Kouran - Reverse Leakage @ Vr 5 µA @ 800 V  
Kouran - Mwayèn Rectified (Io) 15 A  
Nimewo pwodwi baz GBU15  

Anviwònman & ekspòtasyon klasifikasyon

ATRIBI DESKRIPSYON
RoHs Status
Nivo sansiblite imidite (MSL) 1 (Unlimited)
Rive nan estati REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0080

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Taiwan Semiconductor Corporation GBU15L06.

Pwodwi atribi GBU15L06 GBU15K GBU1510 GBU2508
Nimewo Pati GBU15L06 GBU15K GBU1510 GBU2508
Manifakti Taiwan Semiconductor Corporation GeneSiC Semiconductor Yangzhou Yangjie Electronic Technology Co.,Ltd Yangzhou Yangjie Electronic Technology Co.,Ltd
Kouran - Mwayèn Rectified (Io) 15 A 15 A 15 A 25 A
Seri - - - -
Kouran - Reverse Leakage @ Vr 5 µA @ 800 V 5 µA @ 800 V 5 µA @ 1000 V 5 µA @ 800 V
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Founisè Aparèy pake GBU GBU GBU GBU
Voltage - Peak Ranvèse (Max) 800 V 800 V 1 kV 800 V
Pakèt Tube Bulk Tube Tube
Voltage - Forward (Vf) (Max) @ Si 960 mV @ 7.5 A 1.1 V @ 15 A 1 V @ 7.5 A 1 V @ 12.5 A
Pake / Ka 4-SIP, GBU 4-SIP, GBU 4-ESIP, GBU 4-ESIP, GBU
Teknoloji Standard Standard Standard Standard
Mounting Kalite Through Hole Through Hole Through Hole Through Hole
Nimewo pwodwi baz GBU15 GBU15 - -
Kalite dyod Single Phase Single Phase Single Phase Single Phase

GBU15L06 fich PDF

Download GBU15L06 PDF fich ak dokiman Taiwan Semiconductor Corporation pou GBU15L06 - Taiwan Semiconductor Corporation.

Nimewo pati PCN
Part Number Update 1/Jan/2021.pdf
PCN anbalaj
Mult Dev Pkg/PN Chgs 4/Feb/2021.pdf
Fich
GBU15L05, GBU15L06.pdf

Shipment

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Sètifikasyon & Manm

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GBU15L06 Image

GBU15L06

Taiwan Semiconductor Corporation
32D-GBU15L06

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