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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Rèktifikateur - ArrayMBRB3045CT-E3/81
MBRB3045CT-E3/81 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

MBRB3045CT-E3/81 - Vishay General Semiconductor - Diodes Division

Manifakti Nimewo Pati
MBRB3045CT-E3/81
Manifakti
Vishay General Semiconductor – Diodes Division
Allelco Nimewo Pati
32D-MBRB3045CT-E3/81
ECAD modèl
Pati Deskripsyon
DIODE ARRAY SCHOTTKY 45V TO263AB
Deskripsyon detaye
Pake
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Done fèy
MBR(F,B)30x5CT.pdf
RoHs Status
Nan stok: 26662

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Kantite

Espesifikasyon

Espesifikasyon MBRB3045CT-E3/81 Tech
Vishay General Semiconductor - Diodes Division - MBRB3045CT-E3/81 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay General Semiconductor - Diodes Division - MBRB3045CT-E3/81

Pwodwi atribi Valè atribi  
Manifakti Vishay General Semiconductor – Diodes Division  
Voltage - Forward (Vf) (Max) @ Si 600 mV @ 20 A  
Voltage - DC ranvèse (Vr) (Max) 45 V  
Teknoloji Schottky  
Founisè Aparèy pake TO-263AB (D²PAK)  
Vitès Fast Recovery =< 500ns, > 200mA (Io)  
Seri -  
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB  
Pwodwi atribi Valè atribi  
Pakèt Tape & Reel (TR)  
Operating Tanperati - Junction -65°C ~ 150°C  
Mounting Kalite Surface Mount  
Konte genyen dyod 1 Pair Common Cathode  
Kouran - Reverse Leakage @ Vr 1 mA @ 45 V  
Kouran - Mwayèn rektifye (Io) (pou chak dyod) 15A  
Nimewo pwodwi baz MBRB3045  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay General Semiconductor - Diodes Division MBRB3045CT-E3/81.

Pwodwi atribi MBRB3045CT-E3/81 MBRB3045CT-1G MBRB3060CT MBRB3045CT
Nimewo Pati MBRB3045CT-E3/81 MBRB3045CT-1G MBRB3060CT MBRB3045CT
Manifakti Vishay General Semiconductor - Diodes Division onsemi Good-Ark Semiconductor SMC Diode Solutions
Voltage - Forward (Vf) (Max) @ Si 600 mV @ 20 A 620 mV @ 15 A 780 mV @ 30 mA 650 mV @ 15 A
Founisè Aparèy pake TO-263AB (D²PAK) I2PAK (TO-262) TO-263 D2PAK
Seri - SWITCHMODE™ - -
Vitès Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Small Signal =< 200mA (Io), Any Speed Fast Recovery =< 500ns, > 200mA (Io)
Voltage - DC ranvèse (Vr) (Max) 45 V 45 V 60 V 45 V
Pakèt Tape & Reel (TR) Tube Tape & Reel (TR) Tape & Reel (TR)
Konte genyen dyod 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode
Nimewo pwodwi baz MBRB3045 MBRB3045 - MBRB3045
Kouran - Reverse Leakage @ Vr 1 mA @ 45 V 200 µA @ 45 V 200 nA @ 60 V 200 µA @ 45 V
Mounting Kalite Surface Mount Through Hole Surface Mount Surface Mount
Teknoloji Schottky Schottky Schottky Schottky
Kouran - Mwayèn rektifye (Io) (pou chak dyod) 15A 15A 30mA -
Operating Tanperati - Junction -65°C ~ 150°C -65°C ~ 175°C -55°C ~ 150°C -55°C ~ 150°C
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-262-3 Long Leads, I²Pak, TO-262AA TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

MBRB3045CT-E3/81 fich PDF

Download MBRB3045CT-E3/81 PDF fich ak dokiman Vishay General Semiconductor - Diodes Division pou MBRB3045CT-E3/81 - Vishay General Semiconductor - Diodes Division.

Lòt dokiman ki gen rapò
Packaging Information.pdf
Asanble PCN/orijin
Mult Dev Assembly Chg 31/Aug/2018.pdf
PCN konsepsyon/spesifikasyon
MBRB15XXCT-E3/MBRB7XX-E3 16/Dec/2016.pdf
Fich
MBR(F,B)30x5CT.pdf

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Sètifikasyon & Manm

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MBRB3045CT-E3/81 Image

MBRB3045CT-E3/81

Vishay General Semiconductor - Diodes Division
32D-MBRB3045CT-E3/81

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