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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Rèktifikateur - SingleMSS1P6HM3/89A
MSS1P6HM3/89A Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

MSS1P6HM3/89A - Vishay General Semiconductor - Diodes Division

Manifakti Nimewo Pati
MSS1P6HM3/89A
Manifakti
Vishay General Semiconductor – Diodes Division
Allelco Nimewo Pati
32D-MSS1P6HM3/89A
ECAD modèl
Pati Deskripsyon
DIODE SCHOTTKY 60V 1A MICROSMP
Deskripsyon detaye
Pake
MicroSMP
Done fèy
MSS1P5,P6.pdf
RoHs Status
Nan stok: 4500

Jaden obligatwa yo endike pa yon asterisk (*)
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Espesifikasyon

Espesifikasyon MSS1P6HM3/89A Tech
Vishay General Semiconductor - Diodes Division - MSS1P6HM3/89A espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay General Semiconductor - Diodes Division - MSS1P6HM3/89A

Pwodwi atribi Valè atribi  
Manifakti Vishay General Semiconductor – Diodes Division  
Voltage - Forward (Vf) (Max) @ Si 680 mV @ 1 A  
Voltage - DC ranvèse (Vr) (Max) 60 V  
Teknoloji Schottky  
Founisè Aparèy pake MicroSMP (DO-219AD)  
Vitès Fast Recovery =< 500ns, > 200mA (Io)  
Seri Automotive, AEC-Q101, eSMP®  
Pake / Ka MicroSMP  
Pwodwi atribi Valè atribi  
Pakèt Tape & Reel (TR)  
Operating Tanperati - Junction -55°C ~ 150°C  
Mounting Kalite Surface Mount  
Kouran - Reverse Leakage @ Vr 150 µA @ 60 V  
Kouran - Mwayèn Rectified (Io) 1A  
Kapasite @ Vr, F 40pF @ 4V, 1MHz  
Nimewo pwodwi baz MSS1P6  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay General Semiconductor - Diodes Division MSS1P6HM3/89A.

Pwodwi atribi MSS1P6HM3/89A MSS1P6-E3/89A MSS1P6-M3/89A MSS1P6HM3_A/H
Nimewo Pati MSS1P6HM3/89A MSS1P6-E3/89A MSS1P6-M3/89A MSS1P6HM3_A/H
Manifakti Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Voltage - DC ranvèse (Vr) (Max) 60 V 60 V 60 V 60 V
Pake / Ka MicroSMP MicroSMP MicroSMP MicroSMP
Kouran - Mwayèn Rectified (Io) 1A 1A 1A 1A
Kapasite @ Vr, F 40pF @ 4V, 1MHz 40pF @ 4V, 1MHz 40pF @ 4V, 1MHz 40pF @ 4V, 1MHz
Teknoloji Schottky Schottky Schottky Schottky
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Vitès Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Founisè Aparèy pake MicroSMP (DO-219AD) MicroSMP (DO-219AD) MicroSMP (DO-219AD) MicroSMP (DO-219AD)
Voltage - Forward (Vf) (Max) @ Si 680 mV @ 1 A 680 mV @ 1 A 680 mV @ 1 A 680 mV @ 1 A
Operating Tanperati - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C
Seri Automotive, AEC-Q101, eSMP® eSMP® eSMP® Automotive, AEC-Q101
Kouran - Reverse Leakage @ Vr 150 µA @ 60 V 150 µA @ 60 V 150 µA @ 60 V 150 µA @ 60 V
Nimewo pwodwi baz MSS1P6 MSS1P6 MSS1P6 MSS1P6

MSS1P6HM3/89A fich PDF

Download MSS1P6HM3/89A PDF fich ak dokiman Vishay General Semiconductor - Diodes Division pou MSS1P6HM3/89A - Vishay General Semiconductor - Diodes Division.

PCN obsolescence/ eol
Wafer Geometry Conversion 28/Jul/2015.pdf
Fich
MSS1P5,P6.pdf

Shipment

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Sètifikasyon & Manm

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MSS1P6HM3/89A Image

MSS1P6HM3/89A

Vishay General Semiconductor - Diodes Division
32D-MSS1P6HM3/89A

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