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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Rèktifikateur - ArraySBLB25L30CT-E3/81
SBLB25L30CT-E3/81 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

SBLB25L30CT-E3/81 - Vishay General Semiconductor - Diodes Division

Manifakti Nimewo Pati
SBLB25L30CT-E3/81
Manifakti
Vishay General Semiconductor – Diodes Division
Allelco Nimewo Pati
32D-SBLB25L30CT-E3/81
ECAD modèl
Pati Deskripsyon
DIODE ARRAY SCHOTTKY 30V TO263AB
Deskripsyon detaye
Pake
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Done fèy
SBL25L30CT, SBLF25L30CT, SBLB25L30CT.pdf
RoHs Status
Nan stok: 30279

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon SBLB25L30CT-E3/81 Tech
Vishay General Semiconductor - Diodes Division - SBLB25L30CT-E3/81 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay General Semiconductor - Diodes Division - SBLB25L30CT-E3/81

Pwodwi atribi Valè atribi  
Manifakti Vishay General Semiconductor – Diodes Division  
Voltage - Forward (Vf) (Max) @ Si 490 mV @ 12.5 A  
Voltage - DC ranvèse (Vr) (Max) 30 V  
Teknoloji Schottky  
Founisè Aparèy pake TO-263AB (D²PAK)  
Vitès Fast Recovery =< 500ns, > 200mA (Io)  
Seri -  
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB  
Pwodwi atribi Valè atribi  
Pakèt Tape & Reel (TR)  
Operating Tanperati - Junction -55°C ~ 150°C  
Mounting Kalite Surface Mount  
Konte genyen dyod 1 Pair Common Cathode  
Kouran - Reverse Leakage @ Vr 900 µA @ 30 V  
Kouran - Mwayèn rektifye (Io) (pou chak dyod) 12.5A  
Nimewo pwodwi baz SBLB25L30  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay General Semiconductor - Diodes Division SBLB25L30CT-E3/81.

Pwodwi atribi SBLB25L30CT-E3/81 SBLB25L20CT-E3/45 SBLF1640CT-E3/45 SBLB2040CT-E3/81
Nimewo Pati SBLB25L30CT-E3/81 SBLB25L20CT-E3/45 SBLF1640CT-E3/45 SBLB2040CT-E3/81
Manifakti Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Vitès Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Operating Tanperati - Junction -55°C ~ 150°C -55°C ~ 150°C -40°C ~ 125°C -55°C ~ 150°C
Konte genyen dyod 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode
Kouran - Reverse Leakage @ Vr 900 µA @ 30 V 900 µA @ 20 V 500 µA @ 40 V 1 mA @ 40 V
Mounting Kalite Surface Mount Surface Mount Through Hole Surface Mount
Teknoloji Schottky Schottky Schottky Schottky
Seri - - - -
Founisè Aparèy pake TO-263AB (D²PAK) TO-263AB (D²PAK) ITO-220AB TO-263AB (D²PAK)
Pakèt Tape & Reel (TR) Tube Tube Tape & Reel (TR)
Kouran - Mwayèn rektifye (Io) (pou chak dyod) 12.5A 12.5A 8A 10A
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3 Full Pack, Isolated Tab TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Voltage - Forward (Vf) (Max) @ Si 490 mV @ 12.5 A 490 mV @ 12.5 A 550 mV @ 8 A 600 mV @ 10 A
Nimewo pwodwi baz SBLB25L30 SBLB25L20 SBLF1640 SBLB2040
Voltage - DC ranvèse (Vr) (Max) 30 V 20 V 40 V 40 V

SBLB25L30CT-E3/81 fich PDF

Download SBLB25L30CT-E3/81 PDF fich ak dokiman Vishay General Semiconductor - Diodes Division pou SBLB25L30CT-E3/81 - Vishay General Semiconductor - Diodes Division.

Lòt dokiman ki gen rapò
Packaging Information.pdf
Asanble PCN/orijin
Mult Dev Assembly Chg 31/Aug/2018.pdf
Fich
SBL25L30CT, SBLF25L30CT, SBLB25L30CT.pdf
PCN konsepsyon/spesifikasyon
MBRB15XXCT-E3/MBRB7XX-E3 16/Dec/2016.pdf

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Sètifikasyon & Manm

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SBLB25L30CT-E3/81 Image

SBLB25L30CT-E3/81

Vishay General Semiconductor - Diodes Division
32D-SBLB25L30CT-E3/81

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