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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRFD9024
IRFD9024 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRFD9024 - Vishay Siliconix

Manifakti Nimewo Pati
IRFD9024
Manifakti
Vishay / Siliconix
Allelco Nimewo Pati
32D-IRFD9024
ECAD modèl
Pati Deskripsyon
MOSFET P-CH 60V 1.6A 4DIP
Deskripsyon detaye
Pake
4-DIP (0.300", 7.62mm)
Done fèy
IRFD9024.pdf
Nan stok: 5110

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Kantite

Espesifikasyon

Espesifikasyon IRFD9024 Tech
Vishay Siliconix - IRFD9024 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay Siliconix - IRFD9024

Pwodwi atribi Valè atribi  
Manifakti Vishay / Siliconix  
Vgs (th) (Max) @ Id 4V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 4-HVMDIP  
Seri -  
Rds Sou (Max) @ Id, Vgs 280mOhm @ 960mA, 10V  
Dissipasyon pouvwa (Max) 1.3W (Ta)  
Pake / Ka 4-DIP (0.300", 7.62mm)  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 570 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 19 nC @ 10 V  
Fèt tip P-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 60 V  
Kouran - Kontini Drain (Id) @ 25 ° C 1.6A (Ta)  
Nimewo pwodwi baz IRFD9024  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay Siliconix IRFD9024.

Pwodwi atribi IRFD9024 IRFD9014 IRFD9110 IRFD9024PBF
Nimewo Pati IRFD9024 IRFD9014 IRFD9110 IRFD9024PBF
Manifakti Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix
Founisè Aparèy pake 4-HVMDIP 4-HVMDIP 4-HVMDIP 4-HVMDIP
Mounting Kalite Through Hole Through Hole Through Hole Through Hole
Kouran - Kontini Drain (Id) @ 25 ° C 1.6A (Ta) 1.1A (Ta) 700mA (Ta) 1.6A (Ta)
Rds Sou (Max) @ Id, Vgs 280mOhm @ 960mA, 10V 500mOhm @ 660mA, 10V 1.2Ohm @ 420mA, 10V 280mOhm @ 960mA, 10V
Kapasite Antre (Ciss) (Max) @ Vds 570 pF @ 25 V 270 pF @ 25 V 200 pF @ 25 V 570 pF @ 25 V
Vgs (Max) ±20V ±20V ±20V ±20V
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 10V
Pake / Ka 4-DIP (0.300", 7.62mm) 4-DIP (0.300", 7.62mm) 4-DIP (0.300", 7.62mm) 4-DIP (0.300", 7.62mm)
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
FET Feature - - - -
Drenaj Sous Voltage (Vdss) 60 V 60 V 100 V 60 V
Vgs (th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Nimewo pwodwi baz IRFD9024 IRFD9014 IRFD9110 IRFD9024
Pòtay Charge (Qg) (Max) @ Vgs 19 nC @ 10 V 12 nC @ 10 V 8.7 nC @ 10 V 19 nC @ 10 V
Seri - - - -
Pakèt Tube Tube Tube Bulk
Fèt tip P-Channel P-Channel P-Channel P-Channel
Dissipasyon pouvwa (Max) 1.3W (Ta) 1.3W (Ta) 1.3W (Ta) 1.3W (Ta)
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)

IRFD9024 fich PDF

Download IRFD9024 PDF fich ak dokiman Vishay Siliconix pou IRFD9024 - Vishay Siliconix.

PCN obsolescence/ eol
SIL-018-2015-Rev-0 20/May/2015.pdf
Fich
IRFD9024.pdf

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Sètifikasyon & Manm

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IRFD9024 Image

IRFD9024

Vishay Siliconix
32D-IRFD9024

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