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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRFR9110TR
Vishay Siliconix
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRFR9110TR - Vishay Siliconix

Manifakti Nimewo Pati
IRFR9110TR
Manifakti
Vishay / Siliconix
Allelco Nimewo Pati
32D-IRFR9110TR
ECAD modèl
Pati Deskripsyon
MOSFET P-CH 100V 3.1A DPAK
Deskripsyon detaye
Pake
TO-252-3, DPak (2 Leads + Tab), SC-63
Done fèy
IRFR,IRFU,SiHFR,SiHFU_9110.pdf
Nan stok: 4590

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon IRFR9110TR Tech
Vishay Siliconix - IRFR9110TR espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay Siliconix - IRFR9110TR

Pwodwi atribi Valè atribi  
Manifakti Vishay / Siliconix  
Vgs (th) (Max) @ Id 4V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake D-Pak  
Seri -  
Rds Sou (Max) @ Id, Vgs 1.2Ohm @ 1.9A, 10V  
Dissipasyon pouvwa (Max) 2.5W (Ta), 25W (Tc)  
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 200 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 8.7 nC @ 10 V  
Fèt tip P-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 100 V  
Kouran - Kontini Drain (Id) @ 25 ° C 3.1A (Tc)  
Nimewo pwodwi baz IRFR9110  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay Siliconix IRFR9110TR.

Pwodwi atribi IRFR9110TR IRFR9110TF IRFR9110 IRFR9120
Nimewo Pati IRFR9110TR IRFR9110TF IRFR9110 IRFR9120
Manifakti Vishay Siliconix Fairchild Semiconductor Vishay Siliconix Harris Corporation
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Vgs (th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Seri - - - -
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 10V
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Vgs (Max) ±20V ±20V ±20V ±20V
FET Feature - - - -
Pakèt Tape & Reel (TR) Bulk Tube Tube
Kapasite Antre (Ciss) (Max) @ Vds 200 pF @ 25 V 290 pF @ 25 V 200 pF @ 25 V 390 pF @ 25 V
Dissipasyon pouvwa (Max) 2.5W (Ta), 25W (Tc) 25W (Tc) 2.5W (Ta), 25W (Tc) 2.5W (Ta), 42W (Tc)
Pòtay Charge (Qg) (Max) @ Vgs 8.7 nC @ 10 V 8.7 nC @ 10 V 8.7 nC @ 10 V 18 nC @ 10 V
Kouran - Kontini Drain (Id) @ 25 ° C 3.1A (Tc) 3.1A (Tc) 3.1A (Tc) 5.6A (Tc)
Rds Sou (Max) @ Id, Vgs 1.2Ohm @ 1.9A, 10V 1.2Ohm @ 1.9A, 10V 1.2Ohm @ 1.9A, 10V 600mOhm @ 3.4A, 10V
Nimewo pwodwi baz IRFR9110 - IRFR9110 IRFR9120
Drenaj Sous Voltage (Vdss) 100 V 100 V 100 V 100 V
Fèt tip P-Channel P-Channel P-Channel P-Channel
Founisè Aparèy pake D-Pak DPAK D-Pak D-Pak
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount

IRFR9110TR fich PDF

Download IRFR9110TR PDF fich ak dokiman Vishay Siliconix pou IRFR9110TR - Vishay Siliconix.

Fich
IRFR,IRFU,SiHFR,SiHFU_9110.pdf

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Sètifikasyon & Manm

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Vishay Siliconix

IRFR9110TR

Vishay Siliconix
32D-IRFR9110TR

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