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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRFR9120
Vishay Siliconix
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRFR9120 - Vishay Siliconix

Manifakti Nimewo Pati
IRFR9120
Manifakti
Vishay / Siliconix
Allelco Nimewo Pati
32D-IRFR9120
ECAD modèl
Pati Deskripsyon
MOSFET P-CH 100V 5.6A DPAK
Deskripsyon detaye
Pake
TO-252-3, DPak (2 Leads + Tab), SC-63
Done fèy
Power MOSFET.pdf
Nan stok: 3710

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Espesifikasyon

Espesifikasyon IRFR9120 Tech
Vishay Siliconix - IRFR9120 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay Siliconix - IRFR9120

Pwodwi atribi Valè atribi  
Manifakti Vishay / Siliconix  
Vgs (th) (Max) @ Id 4V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake D-Pak  
Seri -  
Rds Sou (Max) @ Id, Vgs 600mOhm @ 3.4A, 10V  
Dissipasyon pouvwa (Max) 2.5W (Ta), 42W (Tc)  
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 390 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 18 nC @ 10 V  
Fèt tip P-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 100 V  
Kouran - Kontini Drain (Id) @ 25 ° C 5.6A (Tc)  
Nimewo pwodwi baz IRFR9120  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay Siliconix IRFR9120.

Pwodwi atribi IRFR9120 IRFR9120 IRFR9110TF IRFR9120PBF
Nimewo Pati IRFR9120 IRFR9120 IRFR9110TF IRFR9120PBF
Manifakti Vishay Siliconix Harris Corporation Fairchild Semiconductor Vishay Siliconix
Founisè Aparèy pake D-Pak D-Pak DPAK D-Pak
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Rds Sou (Max) @ Id, Vgs 600mOhm @ 3.4A, 10V 600mOhm @ 3.4A, 10V 1.2Ohm @ 1.9A, 10V 600mOhm @ 3.4A, 10V
Fèt tip P-Channel P-Channel P-Channel P-Channel
Vgs (Max) ±20V ±20V ±20V ±20V
Kapasite Antre (Ciss) (Max) @ Vds 390 pF @ 25 V 390 pF @ 25 V 290 pF @ 25 V 390 pF @ 25 V
Dissipasyon pouvwa (Max) 2.5W (Ta), 42W (Tc) 2.5W (Ta), 42W (Tc) 25W (Tc) 2.5W (Ta), 42W (Tc)
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 10V
Seri - - - -
Nimewo pwodwi baz IRFR9120 IRFR9120 - IRFR9120
Vgs (th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
FET Feature - - - -
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Pòtay Charge (Qg) (Max) @ Vgs 18 nC @ 10 V 18 nC @ 10 V 8.7 nC @ 10 V 18 nC @ 10 V
Pakèt Tube Tube Bulk Tube
Kouran - Kontini Drain (Id) @ 25 ° C 5.6A (Tc) 5.6A (Tc) 3.1A (Tc) 5.6A (Tc)
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Drenaj Sous Voltage (Vdss) 100 V 100 V 100 V 100 V

IRFR9120 fich PDF

Download IRFR9120 PDF fich ak dokiman Vishay Siliconix pou IRFR9120 - Vishay Siliconix.

Fich
Power MOSFET.pdf

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Sètifikasyon & Manm

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Vishay Siliconix

IRFR9120

Vishay Siliconix
32D-IRFR9120

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