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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - ArraySI3951DV-T1-E3
SI3951DV-T1-E3 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

SI3951DV-T1-E3 - Vishay Siliconix

Manifakti Nimewo Pati
SI3951DV-T1-E3
Manifakti
Vishay / Siliconix
Allelco Nimewo Pati
32D-SI3951DV-T1-E3
ECAD modèl
Pati Deskripsyon
MOSFET 2P-CH 20V 2.7A 6-TSOP
Deskripsyon detaye
Pake
SOT-23-6 Thin, TSOT-23-6
Done fèy
SI3951DV.pdf
RoHs Status
Nan stok: 3780

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Kantite

Espesifikasyon

Espesifikasyon SI3951DV-T1-E3 Tech
Vishay Siliconix - SI3951DV-T1-E3 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay Siliconix - SI3951DV-T1-E3

Pwodwi atribi Valè atribi  
Manifakti Vishay / Siliconix  
Vgs (th) (Max) @ Id 1.5V @ 250µA  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 6-TSOP  
Seri TrenchFET®  
Rds Sou (Max) @ Id, Vgs 115mOhm @ 2.5A, 4.5V  
Pouvwa - Max 2W  
Pake / Ka SOT-23-6 Thin, TSOT-23-6  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 250pF @ 10V  
Pòtay Charge (Qg) (Max) @ Vgs 5.1nC @ 5V  
FET Feature Logic Level Gate  
Drenaj Sous Voltage (Vdss) 20V  
Kouran - Kontini Drain (Id) @ 25 ° C 2.7A  
Konfigirasyon 2 P-Channel (Dual)  
Nimewo pwodwi baz SI3951  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay Siliconix SI3951DV-T1-E3.

Pwodwi atribi SI3951DV-T1-E3 SI3983DV-T1-GE3 SI3932DV-T1-GE3 SI3983DV-T1-E3
Nimewo Pati SI3951DV-T1-E3 SI3983DV-T1-GE3 SI3932DV-T1-GE3 SI3983DV-T1-E3
Manifakti Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
FET Feature Logic Level Gate Logic Level Gate Logic Level Gate Logic Level Gate
Pòtay Charge (Qg) (Max) @ Vgs 5.1nC @ 5V 7.5nC @ 4.5V 6nC @ 10V 7.5nC @ 4.5V
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Konfigirasyon 2 P-Channel (Dual) 2 P-Channel (Dual) 2 N-Channel (Dual) 2 P-Channel (Dual)
Rds Sou (Max) @ Id, Vgs 115mOhm @ 2.5A, 4.5V 110mOhm @ 2.5A, 4.5V 58mOhm @ 3.4A, 10V 110mOhm @ 2.5A, 4.5V
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Pake / Ka SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6
Vgs (th) (Max) @ Id 1.5V @ 250µA 1.1V @ 250µA 2.2V @ 250µA 1.1V @ 250µA
Pouvwa - Max 2W 830mW 1.4W 830mW
Seri TrenchFET® TrenchFET® TrenchFET® TrenchFET®
Kouran - Kontini Drain (Id) @ 25 ° C 2.7A 2.1A 3.7A 2.1A
Drenaj Sous Voltage (Vdss) 20V 20V 30V 20V
Founisè Aparèy pake 6-TSOP 6-TSOP 6-TSOP 6-TSOP
Nimewo pwodwi baz SI3951 SI3983 SI3932 SI3983
Kapasite Antre (Ciss) (Max) @ Vds 250pF @ 10V - 235pF @ 15V -

SI3951DV-T1-E3 fich PDF

Download SI3951DV-T1-E3 PDF fich ak dokiman Vishay Siliconix pou SI3951DV-T1-E3 - Vishay Siliconix.

Fich
SI3951DV.pdf

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Sètifikasyon & Manm

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SI3951DV-T1-E3 Image

SI3951DV-T1-E3

Vishay Siliconix
32D-SI3951DV-T1-E3

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