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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleSI4423DY-T1-GE3
SI4423DY-T1-GE3 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.
EKSPRIME OPSYON
Metòd Peman

SI4423DY-T1-GE3 - Vishay Siliconix

Manifakti Nimewo Pati
SI4423DY-T1-GE3
Manifakti
Vishay / Siliconix
Allelco Nimewo Pati
32D-SI4423DY-T1-GE3
ECAD modèl
Pati Deskripsyon
MOSFET P-CH 20V 10A 8SO
Pake
8-SOIC (0.154", 3.90mm Width)
Done fèy
SI4423DY.pdf
RoHs Status
Sètifikasyon nou an
Nan stok: 28656

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite
EKSPRIME OPSYON
Metòd Peman
Sètifikasyon nou an

Espesifikasyon

Espesifikasyon SI4423DY-T1-GE3 Tech
Vishay Siliconix - SI4423DY-T1-GE3 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay Siliconix - SI4423DY-T1-GE3

Pwodwi atribi Valè atribi  
Manifakti Vishay / Siliconix  
Vgs (th) (Max) @ Id 900mV @ 600µA  
Vgs (Max) ±8V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-SOIC  
Seri TrenchFET®  
Rds Sou (Max) @ Id, Vgs 7.5mOhm @ 14A, 4.5V  
Dissipasyon pouvwa (Max) 1.5W (Ta)  
Pake / Ka 8-SOIC (0.154", 3.90mm Width)  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Pòtay Charge (Qg) (Max) @ Vgs 175 nC @ 5 V  
Fèt tip P-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 1.8V, 4.5V  
Drenaj Sous Voltage (Vdss) 20 V  
Kouran - Kontini Drain (Id) @ 25 ° C 10A (Ta)  
Nimewo pwodwi baz SI4423  

Anviwònman & ekspòtasyon klasifikasyon

ATRIBI DESKRIPSYON
RoHs Status
Nivo sansiblite imidite (MSL) 1 (Unlimited)
Rive nan estati
ECCN EAR99
HTSUS

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay Siliconix SI4423DY-T1-GE3.

Pwodwi atribi SI4423DY-T1-GE3 SI4425BDY-T1-E3 SI4421DY-T1-E3 SI4425BDY-T1-GE3
Nimewo Pati SI4423DY-T1-GE3 SI4425BDY-T1-E3 SI4421DY-T1-E3 SI4425BDY-T1-GE3
Manifakti Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix
Dissipasyon pouvwa (Max) 1.5W (Ta) 1.5W (Ta) 1.5W (Ta) 1.5W (Ta)
Founisè Aparèy pake 8-SOIC 8-SOIC 8-SOIC 8-SOIC
Drenaj Sous Voltage (Vdss) 20 V 30 V 20 V 30 V
Kondwi Voltage (Max Rds sou, Min Rds sou) 1.8V, 4.5V 4.5V, 10V 1.8V, 4.5V 4.5V, 10V
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Pòtay Charge (Qg) (Max) @ Vgs 175 nC @ 5 V 100 nC @ 10 V 125 nC @ 4.5 V 100 nC @ 10 V
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Vgs (th) (Max) @ Id 900mV @ 600µA 3V @ 250µA 800mV @ 850µA 3V @ 250µA
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Fèt tip P-Channel P-Channel P-Channel P-Channel
Kouran - Kontini Drain (Id) @ 25 ° C 10A (Ta) 8.8A (Ta) 10A (Ta) 8.8A (Ta)
Vgs (Max) ±8V ±20V ±8V ±20V
FET Feature - - - -
Nimewo pwodwi baz SI4423 SI4425 SI4421 SI4425
Pake / Ka 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Rds Sou (Max) @ Id, Vgs 7.5mOhm @ 14A, 4.5V 12mOhm @ 11.4A, 10V 8.75mOhm @ 14A, 4.5V 12mOhm @ 11.4A, 10V
Seri TrenchFET® TrenchFET® TrenchFET® TrenchFET®

SI4423DY-T1-GE3 fich PDF

Download SI4423DY-T1-GE3 PDF fich ak dokiman Vishay Siliconix pou SI4423DY-T1-GE3 - Vishay Siliconix.

Asanble PCN/orijin
New Solder Plating Site 18/Apr/2023.pdf
Fich
SI4423DY.pdf

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SI4423DY-T1-GE3 Image

SI4423DY-T1-GE3

Vishay Siliconix
32D-SI4423DY-T1-GE3

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