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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleSI7384DP-T1-GE3
Vishay Siliconix
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

SI7384DP-T1-GE3 - Vishay Siliconix

Manifakti Nimewo Pati
SI7384DP-T1-GE3
Manifakti
Vishay / Siliconix
Allelco Nimewo Pati
32D-SI7384DP-T1-GE3
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 30V 11A PPAK SO-8
Deskripsyon detaye
Pake
PowerPAK® SO-8
Done fèy
SI7384DP.pdf
RoHs Status
Nan stok: 4830

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon SI7384DP-T1-GE3 Tech
Vishay Siliconix - SI7384DP-T1-GE3 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay Siliconix - SI7384DP-T1-GE3

Pwodwi atribi Valè atribi  
Manifakti Vishay / Siliconix  
Vgs (th) (Max) @ Id 3V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake PowerPAK® SO-8  
Seri TrenchFET®  
Rds Sou (Max) @ Id, Vgs 8.5mOhm @ 18A, 10V  
Dissipasyon pouvwa (Max) 1.8W (Ta)  
Pake / Ka PowerPAK® SO-8  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Pòtay Charge (Qg) (Max) @ Vgs 18 nC @ 4.5 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V  
Drenaj Sous Voltage (Vdss) 30 V  
Kouran - Kontini Drain (Id) @ 25 ° C 11A (Ta)  
Nimewo pwodwi baz SI7384  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay Siliconix SI7384DP-T1-GE3.

Pwodwi atribi SI7384DP-T1-GE3 SI7382DP-T1-E3 SI7386DP-T1-GE3 SI7386DP-T1-E3
Nimewo Pati SI7384DP-T1-GE3 SI7382DP-T1-E3 SI7386DP-T1-GE3 SI7386DP-T1-E3
Manifakti Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix
Fèt tip N-Channel N-Channel N-Channel N-Channel
Nimewo pwodwi baz SI7384 SI7382 SI7386 SI7386
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Pake / Ka PowerPAK® SO-8 PowerPAK® SO-8 PowerPAK® SO-8 PowerPAK® SO-8
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Pòtay Charge (Qg) (Max) @ Vgs 18 nC @ 4.5 V 40 nC @ 4.5 V 18 nC @ 4.5 V 18 nC @ 4.5 V
Seri TrenchFET® TrenchFET® TrenchFET® TrenchFET®
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drenaj Sous Voltage (Vdss) 30 V 30 V 30 V 30 V
Founisè Aparèy pake PowerPAK® SO-8 PowerPAK® SO-8 PowerPAK® SO-8 PowerPAK® SO-8
Rds Sou (Max) @ Id, Vgs 8.5mOhm @ 18A, 10V 4.7mOhm @ 24A, 10V 7mOhm @ 19A, 10V 7mOhm @ 19A, 10V
Kouran - Kontini Drain (Id) @ 25 ° C 11A (Ta) 14A (Ta) 12A (Ta) 12A (Ta)
Vgs (Max) ±20V ±20V ±20V ±20V
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
FET Feature - - - -
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Vgs (th) (Max) @ Id 3V @ 250µA 3V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Dissipasyon pouvwa (Max) 1.8W (Ta) 1.8W (Ta) 1.8W (Ta) 1.8W (Ta)

SI7384DP-T1-GE3 fich PDF

Download SI7384DP-T1-GE3 PDF fich ak dokiman Vishay Siliconix pou SI7384DP-T1-GE3 - Vishay Siliconix.

Asanble PCN/orijin
Multiple Fabracation Changes09/Jul/2014.pdf
PCN obsolescence/ eol
Mult Mosfet EOL 30/Aug/2018.pdf
Fich
SI7384DP.pdf

Shipment

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Sètifikasyon & Manm

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Vishay Siliconix

SI7384DP-T1-GE3

Vishay Siliconix
32D-SI7384DP-T1-GE3

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