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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleSIHA15N60E-E3
Vishay Siliconix
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.
EKSPRIME OPSYON
Metòd Peman

SIHA15N60E-E3 - Vishay Siliconix

Manifakti Nimewo Pati
SIHA15N60E-E3
Manifakti
Vishay / Siliconix
Allelco Nimewo Pati
32D-SIHA15N60E-E3
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 600V 15A TO220
Pake
TO-220-3 Full Pack
Done fèy
SIHA15N60E.pdf
RoHs Status
Sètifikasyon nou an
Nan stok: 25117

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite
EKSPRIME OPSYON
Metòd Peman
Sètifikasyon nou an

Espesifikasyon

Espesifikasyon SIHA15N60E-E3 Tech
Vishay Siliconix - SIHA15N60E-E3 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay Siliconix - SIHA15N60E-E3

Pwodwi atribi Valè atribi  
Manifakti Vishay / Siliconix  
Vgs (th) (Max) @ Id 4V @ 250µA  
Vgs (Max) ±30V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-220 Full Pack  
Seri -  
Rds Sou (Max) @ Id, Vgs 280mOhm @ 8A, 10V  
Dissipasyon pouvwa (Max) 34W (Tc)  
Pake / Ka TO-220-3 Full Pack  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 1350 pF @ 100 V  
Pòtay Charge (Qg) (Max) @ Vgs 76 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 600 V  
Kouran - Kontini Drain (Id) @ 25 ° C 15A (Tc)  
Nimewo pwodwi baz SIHA15  

Anviwònman & ekspòtasyon klasifikasyon

ATRIBI DESKRIPSYON
RoHs Status
Nivo sansiblite imidite (MSL) 1 (Unlimited)
Rive nan estati
ECCN EAR99
HTSUS

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay Siliconix SIHA15N60E-E3.

Pwodwi atribi SIHA15N60E-E3 SIHB12N60ET1-GE3 SIHA22N60E-E3 SIHA20N50E-E3
Nimewo Pati SIHA15N60E-E3 SIHB12N60ET1-GE3 SIHA22N60E-E3 SIHA20N50E-E3
Manifakti Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix
Kouran - Kontini Drain (Id) @ 25 ° C 15A (Tc) 12A (Tc) 21A (Tc) 19A (Tc)
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 10V
Pòtay Charge (Qg) (Max) @ Vgs 76 nC @ 10 V 58 nC @ 10 V 86 nC @ 10 V 92 nC @ 10 V
Drenaj Sous Voltage (Vdss) 600 V 600 V 600 V 500 V
Dissipasyon pouvwa (Max) 34W (Tc) 147W (Tc) 35W (Tc) 34W (Tc)
Vgs (th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
FET Feature - - - -
Mounting Kalite Through Hole Surface Mount Through Hole Through Hole
Nimewo pwodwi baz SIHA15 SIHB12 SIHA22 SIHA20
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Rds Sou (Max) @ Id, Vgs 280mOhm @ 8A, 10V 380mOhm @ 6A, 10V 180mOhm @ 11A, 10V 184mOhm @ 10A, 10V
Pake / Ka TO-220-3 Full Pack TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3 Full Pack TO-220-3 Full Pack
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Seri - E - -
Fèt tip N-Channel N-Channel N-Channel N-Channel
Founisè Aparèy pake TO-220 Full Pack D²PAK (TO-263) TO-220 Full Pack TO-220 Full Pack
Kapasite Antre (Ciss) (Max) @ Vds 1350 pF @ 100 V 937 pF @ 100 V 1920 pF @ 100 V 1640 pF @ 100 V
Vgs (Max) ±30V ±30V ±30V ±30V
Pakèt Tube Bulk Tube Tube

SIHA15N60E-E3 fich PDF

Download SIHA15N60E-E3 PDF fich ak dokiman Vishay Siliconix pou SIHA15N60E-E3 - Vishay Siliconix.

Fich
SIHA15N60E.pdf
Asanble PCN/orijin
SIL-079-2014-Rev-0 26/Sep/2014.pdf

Shipment

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Sètifikasyon & Manm

Wè plis
Vishay Siliconix

SIHA15N60E-E3

Vishay Siliconix
32D-SIHA15N60E-E3

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