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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleSIR800ADP-T1-GE3
Vishay Siliconix
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

SIR800ADP-T1-GE3 - Vishay Siliconix

Manifakti Nimewo Pati
SIR800ADP-T1-GE3
Manifakti
Vishay / Siliconix
Allelco Nimewo Pati
32D-SIR800ADP-T1-GE3
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 20V 50.2A/177A PPAK
Deskripsyon detaye
Pake
PowerPAK® SO-8
Done fèy
SIR800ADP.pdf
RoHs Status
Nan stok: 38440

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon SIR800ADP-T1-GE3 Tech
Vishay Siliconix - SIR800ADP-T1-GE3 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay Siliconix - SIR800ADP-T1-GE3

Pwodwi atribi Valè atribi  
Manifakti Vishay / Siliconix  
Vgs (th) (Max) @ Id 1.5V @ 250µA  
Vgs (Max) +12V, -8V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake PowerPAK® SO-8  
Seri TrenchFET® Gen IV  
Rds Sou (Max) @ Id, Vgs 1.35mOhm @ 10A, 10V  
Dissipasyon pouvwa (Max) 5W (Ta), 62.5W (Tc)  
Pake / Ka PowerPAK® SO-8  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 3415 pF @ 10 V  
Pòtay Charge (Qg) (Max) @ Vgs 53 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 2.5V, 10V  
Drenaj Sous Voltage (Vdss) 20 V  
Kouran - Kontini Drain (Id) @ 25 ° C 50.2A (Ta), 177A (Tc)  
Nimewo pwodwi baz SIR800  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay Siliconix SIR800ADP-T1-GE3.

Pwodwi atribi SIR800ADP-T1-GE3 SIR804DP-T1-GE3 SIR798DP-T1-GE3 SIR802DP-T1-GE3
Nimewo Pati SIR800ADP-T1-GE3 SIR804DP-T1-GE3 SIR798DP-T1-GE3 SIR802DP-T1-GE3
Manifakti Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix
Seri TrenchFET® Gen IV TrenchFET® - TrenchFET®
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Fèt tip N-Channel N-Channel N-Channel N-Channel
Dissipasyon pouvwa (Max) 5W (Ta), 62.5W (Tc) 6.25W (Ta), 104W (Tc) 83W (Tc) 4.6W (Ta), 27.7W (Tc)
Pake / Ka PowerPAK® SO-8 PowerPAK® SO-8 PowerPAK® SO-8 PowerPAK® SO-8
Pòtay Charge (Qg) (Max) @ Vgs 53 nC @ 10 V 76 nC @ 10 V 130 nC @ 10 V 32 nC @ 10 V
Kondwi Voltage (Max Rds sou, Min Rds sou) 2.5V, 10V 4.5V, 10V 4.5V, 10V 2.5V, 10V
Kapasite Antre (Ciss) (Max) @ Vds 3415 pF @ 10 V 2450 pF @ 50 V 5050 pF @ 15 V 1785 pF @ 10 V
Founisè Aparèy pake PowerPAK® SO-8 PowerPAK® SO-8 PowerPAK® SO-8 PowerPAK® SO-8
Drenaj Sous Voltage (Vdss) 20 V 100 V 30 V 20 V
Vgs (th) (Max) @ Id 1.5V @ 250µA 3V @ 250µA 2.5V @ 250µA 1.5V @ 250µA
FET Feature - - Schottky Diode (Body) -
Rds Sou (Max) @ Id, Vgs 1.35mOhm @ 10A, 10V 7.2mOhm @ 20A, 10V 2.05Ohm @ 20A, 10V 5mOhm @ 10A, 10V
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Vgs (Max) +12V, -8V ±20V ±20V ±12V
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Nimewo pwodwi baz SIR800 SIR804 SIR798 SIR802
Kouran - Kontini Drain (Id) @ 25 ° C 50.2A (Ta), 177A (Tc) 60A (Tc) 60A (Tc) 30A (Tc)

SIR800ADP-T1-GE3 fich PDF

Download SIR800ADP-T1-GE3 PDF fich ak dokiman Vishay Siliconix pou SIR800ADP-T1-GE3 - Vishay Siliconix.

PCN konsepsyon/spesifikasyon
Mult Dev 07/Jun/2023.pdf New solder paste 26/May/2023.pdf
Asanble PCN/orijin
New Solder Plating Site 18/Apr/2023.pdf
Fich
SIR800ADP.pdf

Shipment

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Sètifikasyon & Manm

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Vishay Siliconix

SIR800ADP-T1-GE3

Vishay Siliconix
32D-SIR800ADP-T1-GE3

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