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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - ArraySIZ704DT-T1-GE3
Vishay Siliconix
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

SIZ704DT-T1-GE3 - Vishay Siliconix

Manifakti Nimewo Pati
SIZ704DT-T1-GE3
Manifakti
Vishay / Siliconix
Allelco Nimewo Pati
32D-SIZ704DT-T1-GE3
ECAD modèl
Pati Deskripsyon
MOSFET 2N-CH 30V 12A PPAK 1212-8
Deskripsyon detaye
Pake
6-PowerPair™
Done fèy
SIZ704DT.pdf
RoHs Status
Nan stok: 59640

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon SIZ704DT-T1-GE3 Tech
Vishay Siliconix - SIZ704DT-T1-GE3 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay Siliconix - SIZ704DT-T1-GE3

Pwodwi atribi Valè atribi  
Manifakti Vishay / Siliconix  
Vgs (th) (Max) @ Id 2.5V @ 250µA  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 6-PowerPair™  
Seri TrenchFET®  
Rds Sou (Max) @ Id, Vgs 24mOhm @ 7.8A, 10V  
Pouvwa - Max 20W, 30W  
Pake / Ka 6-PowerPair™  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 435pF @ 15V  
Pòtay Charge (Qg) (Max) @ Vgs 12nC @ 10V  
FET Feature Logic Level Gate  
Drenaj Sous Voltage (Vdss) 30V  
Kouran - Kontini Drain (Id) @ 25 ° C 12A, 16A  
Konfigirasyon 2 N-Channel (Half Bridge)  
Nimewo pwodwi baz SIZ704  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay Siliconix SIZ704DT-T1-GE3.

Pwodwi atribi SIZ704DT-T1-GE3 SIZ728DT-T1-GE3 SIZ702DT-T1-GE3 SIZ342DT-T1-GE3
Nimewo Pati SIZ704DT-T1-GE3 SIZ728DT-T1-GE3 SIZ702DT-T1-GE3 SIZ342DT-T1-GE3
Manifakti Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Kapasite Antre (Ciss) (Max) @ Vds 435pF @ 15V 890pF @ 12.5V 790pF @ 15V 650pF @ 15V
FET Feature Logic Level Gate Logic Level Gate Logic Level Gate -
Pake / Ka 6-PowerPair™ 6-PowerPair™ 6-PowerPair™ 8-PowerWDFN
Rds Sou (Max) @ Id, Vgs 24mOhm @ 7.8A, 10V 7.7mOhm @ 18A, 10V 12mOhm @ 13.8A, 10V 11.5mOhm @ 14A, 10V
Vgs (th) (Max) @ Id 2.5V @ 250µA 2.2V @ 250µA 2.5V @ 250µA 2.4V @ 250µA
Drenaj Sous Voltage (Vdss) 30V 25V 30V 30V
Nimewo pwodwi baz SIZ704 SIZ728 SIZ702 SIZ342
Kouran - Kontini Drain (Id) @ 25 ° C 12A, 16A 16A, 35A 16A 15.7A (Ta), 100A (Tc)
Founisè Aparèy pake 6-PowerPair™ 6-PowerPair™ 6-PowerPair™ 8-Power33 (3x3)
Konfigirasyon 2 N-Channel (Half Bridge) 2 N-Channel (Half Bridge) 2 N-Channel (Half Bridge) 2 N-Channel (Dual)
Seri TrenchFET® TrenchFET® TrenchFET® TrenchFET®
Pouvwa - Max 20W, 30W 27W, 48W 27W, 30W 3.6W, 4.3W
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) -
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Pòtay Charge (Qg) (Max) @ Vgs 12nC @ 10V 26nC @ 10V 21nC @ 10V 20nC @ 10V

SIZ704DT-T1-GE3 fich PDF

Download SIZ704DT-T1-GE3 PDF fich ak dokiman Vishay Siliconix pou SIZ704DT-T1-GE3 - Vishay Siliconix.

PCN konsepsyon/spesifikasyon
Epoxy Materials 07/Jan/2022.pdf
Fich
SIZ704DT.pdf

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Sètifikasyon & Manm

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Vishay Siliconix

SIZ704DT-T1-GE3

Vishay Siliconix
32D-SIZ704DT-T1-GE3

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