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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleSQ2398ES-T1_GE3
SQ2398ES-T1_GE3 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

SQ2398ES-T1_GE3 - Vishay Siliconix

Manifakti Nimewo Pati
SQ2398ES-T1_GE3
Manifakti
Vishay / Siliconix
Allelco Nimewo Pati
32D-SQ2398ES-T1_GE3
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 100V 1.6A SOT23-3
Deskripsyon detaye
Pake
TO-236-3, SC-59, SOT-23-3
Done fèy
SQ2398ES.pdf
Nan stok: 183200

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon SQ2398ES-T1_GE3 Tech
Vishay Siliconix - SQ2398ES-T1_GE3 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay Siliconix - SQ2398ES-T1_GE3

Pwodwi atribi Valè atribi  
Manifakti Vishay / Siliconix  
Vgs (th) (Max) @ Id 3.5V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake SOT-23-3 (TO-236)  
Seri Automotive, AEC-Q101, TrenchFET®  
Rds Sou (Max) @ Id, Vgs 300mOhm @ 1.5A, 10V  
Dissipasyon pouvwa (Max) 2W (Tc)  
Pake / Ka TO-236-3, SC-59, SOT-23-3  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 152 pF @ 50 V  
Pòtay Charge (Qg) (Max) @ Vgs 3.4 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 100 V  
Kouran - Kontini Drain (Id) @ 25 ° C 1.6A (Tc)  
Nimewo pwodwi baz SQ2398  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay Siliconix SQ2398ES-T1_GE3.

Pwodwi atribi SQ2398ES-T1_GE3 SQ2389ES-T1_GE3 SQ2364EES-T1_GE3 SQ24-15S400
Nimewo Pati SQ2398ES-T1_GE3 SQ2389ES-T1_GE3 SQ2364EES-T1_GE3 SQ24-15S400
Manifakti Vishay Siliconix Vishay Siliconix Vishay Siliconix ASIA
Mounting Kalite Surface Mount Surface Mount Surface Mount -
Pake / Ka TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 -
Drenaj Sous Voltage (Vdss) 100 V 40 V 60 V -
Founisè Aparèy pake SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) -
Dissipasyon pouvwa (Max) 2W (Tc) 3W (Tc) 3W (Tc) -
FET Feature - - - -
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 4.5V, 10V 1.5V, 4.5V -
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) -
Rds Sou (Max) @ Id, Vgs 300mOhm @ 1.5A, 10V 94mOhm @ 10A, 10V 240mOhm @ 2A, 4.5V -
Nimewo pwodwi baz SQ2398 SQ2389 SQ2364 -
Kapasite Antre (Ciss) (Max) @ Vds 152 pF @ 50 V 420 pF @ 20 V 330 pF @ 25 V -
Seri Automotive, AEC-Q101, TrenchFET® Automotive, AEC-Q101, TrenchFET® Automotive, AEC-Q101, TrenchFET® -
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) -
Vgs (th) (Max) @ Id 3.5V @ 250µA 2.5V @ 250µA 1V @ 250µA -
Pòtay Charge (Qg) (Max) @ Vgs 3.4 nC @ 10 V 12 nC @ 10 V 2.5 nC @ 4.5 V -
Fèt tip N-Channel P-Channel N-Channel -
Vgs (Max) ±20V ±20V ±8V -
Kouran - Kontini Drain (Id) @ 25 ° C 1.6A (Tc) 4.1A (Tc) 2A (Tc) -

SQ2398ES-T1_GE3 fich PDF

Download SQ2398ES-T1_GE3 PDF fich ak dokiman Vishay Siliconix pou SQ2398ES-T1_GE3 - Vishay Siliconix.

Fich
SQ2398ES.pdf

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SQ2398ES-T1_GE3 Image

SQ2398ES-T1_GE3

Vishay Siliconix
32D-SQ2398ES-T1_GE3

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