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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleSQM40P10-40L_GE3
Vishay Siliconix
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

SQM40P10-40L_GE3 - Vishay Siliconix

Manifakti Nimewo Pati
SQM40P10-40L_GE3
Manifakti
Vishay / Siliconix
Allelco Nimewo Pati
32D-SQM40P10-40L_GE3
ECAD modèl
Pati Deskripsyon
MOSFET P-CH 100V 40A TO263
Deskripsyon detaye
Pake
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Done fèy
SQM40P10-40L.pdf
Nan stok: 25489

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon SQM40P10-40L_GE3 Tech
Vishay Siliconix - SQM40P10-40L_GE3 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay Siliconix - SQM40P10-40L_GE3

Pwodwi atribi Valè atribi  
Manifakti Vishay / Siliconix  
Vgs (th) (Max) @ Id 2.5V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-263 (D²Pak)  
Seri Automotive, AEC-Q101, TrenchFET®  
Rds Sou (Max) @ Id, Vgs 40mOhm @ 17A, 10V  
Dissipasyon pouvwa (Max) 150W (Tc)  
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 5295 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 134 nC @ 10 V  
Fèt tip P-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V  
Drenaj Sous Voltage (Vdss) 100 V  
Kouran - Kontini Drain (Id) @ 25 ° C 40A (Tc)  
Nimewo pwodwi baz SQM40  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay Siliconix SQM40P10-40L_GE3.

Pwodwi atribi SQM40P10-40L_GE3 SQM50020EL_GE3 SQM50034EL_GE3 SQM40041EL_GE3
Nimewo Pati SQM40P10-40L_GE3 SQM50020EL_GE3 SQM50034EL_GE3 SQM40041EL_GE3
Manifakti Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix
Drenaj Sous Voltage (Vdss) 100 V 60 V 60 V 40 V
Pòtay Charge (Qg) (Max) @ Vgs 134 nC @ 10 V 200 nC @ 10 V 90 nC @ 10 V 450 nC @ 10 V
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Seri Automotive, AEC-Q101, TrenchFET® Automotive, AEC-Q101, TrenchFET® Automotive, AEC-Q101, TrenchFET® Automotive, AEC-Q101, TrenchFET®
Founisè Aparèy pake TO-263 (D²Pak) TO-263 (D²Pak) TO-263 (D²Pak) TO-263 (D²Pak)
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Dissipasyon pouvwa (Max) 150W (Tc) 375W (Tc) 150W (Tc) 157W (Tc)
Nimewo pwodwi baz SQM40 SQM50020 SQM50034 SQM40041
Vgs (Max) ±20V ±20V ±20V ±20V
FET Feature - - - -
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Fèt tip P-Channel N-Channel N-Channel P-Channel
Rds Sou (Max) @ Id, Vgs 40mOhm @ 17A, 10V 2mOhm @ 30A, 10V 3.9mOhm @ 20A, 10V 3.4mOhm @ 25A, 10V
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Kouran - Kontini Drain (Id) @ 25 ° C 40A (Tc) 120A (Tc) 100A (Tc) 120A (Tc)
Vgs (th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Kapasite Antre (Ciss) (Max) @ Vds 5295 pF @ 25 V 15100 pF @ 25 V 6100 pF @ 25 V 23600 pF @ 25 V

SQM40P10-40L_GE3 fich PDF

Download SQM40P10-40L_GE3 PDF fich ak dokiman Vishay Siliconix pou SQM40P10-40L_GE3 - Vishay Siliconix.

Asanble PCN/orijin
Additional Backmetal Capability 12/APR/2023.pdf
Fich
SQM40P10-40L.pdf

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Sètifikasyon & Manm

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Vishay Siliconix

SQM40P10-40L_GE3

Vishay Siliconix
32D-SQM40P10-40L_GE3

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