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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleSUD19N20-90-T4-E3
Vishay Siliconix
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

SUD19N20-90-T4-E3 - Vishay Siliconix

Manifakti Nimewo Pati
SUD19N20-90-T4-E3
Manifakti
Vishay / Siliconix
Allelco Nimewo Pati
32D-SUD19N20-90-T4-E3
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 200V 19A TO252
Deskripsyon detaye
Pake
TO-252-3, DPak (2 Leads + Tab), SC-63
Done fèy
SUD19N20-90-T4-E3.pdf
RoHs Status
Nan stok: 20037

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon SUD19N20-90-T4-E3 Tech
Vishay Siliconix - SUD19N20-90-T4-E3 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay Siliconix - SUD19N20-90-T4-E3

Pwodwi atribi Valè atribi  
Manifakti Vishay / Siliconix  
Vgs (th) (Max) @ Id 4V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-252AA  
Seri TrenchFET®  
Rds Sou (Max) @ Id, Vgs 90mOhm @ 5A, 10V  
Dissipasyon pouvwa (Max) 3W (Ta), 136W (Tc)  
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 1800 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 51 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 6V, 10V  
Drenaj Sous Voltage (Vdss) 200 V  
Kouran - Kontini Drain (Id) @ 25 ° C 19A (Tc)  
Nimewo pwodwi baz SUD19  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay Siliconix SUD19N20-90-T4-E3.

Pwodwi atribi SUD19N20-90-T4-E3 SUD19P06-60-E3 SUD19P06-60-GE3 SUD19P06-60L-E3
Nimewo Pati SUD19N20-90-T4-E3 SUD19P06-60-E3 SUD19P06-60-GE3 SUD19P06-60L-E3
Manifakti Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix
Fèt tip N-Channel P-Channel P-Channel P-Channel
Kondwi Voltage (Max Rds sou, Min Rds sou) 6V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Kapasite Antre (Ciss) (Max) @ Vds 1800 pF @ 25 V 1710 pF @ 25 V 1710 pF @ 25 V 1710 pF @ 25 V
Rds Sou (Max) @ Id, Vgs 90mOhm @ 5A, 10V 60mOhm @ 10A, 10V 60mOhm @ 10A, 10V 60mOhm @ 10A, 10V
Dissipasyon pouvwa (Max) 3W (Ta), 136W (Tc) 2.3W (Ta), 38.5W (Tc) 2.3W (Ta), 38.5W (Tc) 2.7W (Ta), 46W (Tc)
Seri TrenchFET® TrenchFET® TrenchFET® TrenchFET®
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Nimewo pwodwi baz SUD19 SUD19 SUD19 SUD19
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Pòtay Charge (Qg) (Max) @ Vgs 51 nC @ 10 V 40 nC @ 10 V 40 nC @ 10 V 40 nC @ 10 V
FET Feature - - - -
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Kouran - Kontini Drain (Id) @ 25 ° C 19A (Tc) 18.3A (Tc) 18.3A (Tc) 19A (Tc)
Founisè Aparèy pake TO-252AA TO-252AA TO-252AA TO-252AA
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Vgs (Max) ±20V ±20V ±20V ±20V
Drenaj Sous Voltage (Vdss) 200 V 60 V 60 V 60 V
Vgs (th) (Max) @ Id 4V @ 250µA 3V @ 250µA 3V @ 250µA 3V @ 250µA

Shipment

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  1. Telefòn
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Sètifikasyon & Manm

Wè plis
Vishay Siliconix

SUD19N20-90-T4-E3

Vishay Siliconix
32D-SUD19N20-90-T4-E3

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