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KayPwodwi yoSikit entegre Integrated (ICs)PMIC - Chofè GateADP3412JR
ADP3412JR Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

ADP3412JR - onsemi

Manifakti Nimewo Pati
ADP3412JR
Manifakti
onsemi
Allelco Nimewo Pati
32D-ADP3412JR
ECAD modèl
Pati Deskripsyon
IC GATE DRVR HALF-BRIDGE 8SOIC
Deskripsyon detaye
Pake
8-SOIC (0.154', 3.90mm Width)
Done fèy
ADP3412JR.pdf
Nan stok: 11860

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon ADP3412JR Tech
onsemi - ADP3412JR espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak onsemi - ADP3412JR

Pwodwi atribi Valè atribi  
Manifakti onsemi  
Voltage - Pwovizyon pou 4.15V ~ 7.5V  
Founisè Aparèy pake 8-SOIC  
Seri -  
Leve / tonbe tan (tip) 20ns, 20ns  
Pake / Ka 8-SOIC (0.154', 3.90mm Width)  
Pakèt Tube  
Operating Tanperati 0°C ~ 125°C (TJ)  
Kantite chofè 2  
Pwodwi atribi Valè atribi  
Mounting Kalite Surface Mount  
Lojik Voltage - VIL, VIH 0.8V, 2V  
Kalite Antre Non-Inverting  
Segondè Side Voltage - Max (Bootstrap) 30 V  
Pòt tip N-Channel MOSFET  
Kondwi konte genyen Half-Bridge  
Kouran - Sòti Pik (Sous, Sink) -  
Chèn Kalite Synchronous  
Nimewo pwodwi baz ADP3412  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou onsemi ADP3412JR.

Pwodwi atribi ADP3412JR ADP3412JR-REEL7 ADP3412JR-REEL ADP3414JR
Nimewo Pati ADP3412JR ADP3412JR-REEL7 ADP3412JR-REEL ADP3414JR
Manifakti onsemi Analog Devices Inc. Analog Devices Inc. Analog Devices Inc.
Kalite Antre Non-Inverting Non-Inverting - Non-Inverting
Kondwi konte genyen Half-Bridge High-Side Half-Bridge High-Side
Kouran - Sòti Pik (Sous, Sink) - - - -
Pake / Ka 8-SOIC (0.154', 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Pakèt Tube Bulk Bulk Bulk
Chèn Kalite Synchronous Independent Synchronous Synchronous
Voltage - Pwovizyon pou 4.15V ~ 7.5V 4.15V ~ 7.5V 4.15V ~ 7.5V 4.15V ~ 7.5V
Operating Tanperati 0°C ~ 125°C (TJ) 0°C ~ 125°C (TJ) - 0°C ~ 70°C (TA)
Pòt tip N-Channel MOSFET N-Channel MOSFET - N-Channel MOSFET
Seri - ADP3412 - -
Leve / tonbe tan (tip) 20ns, 20ns - - -
Segondè Side Voltage - Max (Bootstrap) 30 V - 30 V -
Founisè Aparèy pake 8-SOIC 8-SOIC 8-SOIC 8-SOIC
Kantite chofè 2 2 2 2
Nimewo pwodwi baz ADP3412 ADP3412 ADP3412 ADP3414
Lojik Voltage - VIL, VIH 0.8V, 2V 0.8V, 2V - 0.8V, 2.3V

ADP3412JR fich PDF

Download ADP3412JR PDF fich ak dokiman onsemi pou ADP3412JR - onsemi.

Enfòmasyon sou anviwònman an
onsemi RoHS.pdf

Shipment

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  1. Telefòn
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Sètifikasyon & Manm

Wè plis
ADP3412JR Image

ADP3412JR

onsemi
32D-ADP3412JR

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