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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleBBS3002-DL-1E
BBS3002-DL-1E Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

BBS3002-DL-1E - onsemi

Manifakti Nimewo Pati
BBS3002-DL-1E
Manifakti
onsemi
Allelco Nimewo Pati
32D-BBS3002-DL-1E
ECAD modèl
Pati Deskripsyon
MOSFET P-CH 60V 100A D2PAK
Deskripsyon detaye
Pake
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Done fèy
BBS3002-DL-1E.pdf
RoHs Status
Nan stok: 4810

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon BBS3002-DL-1E Tech
onsemi - BBS3002-DL-1E espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak onsemi - BBS3002-DL-1E

Pwodwi atribi Valè atribi  
Manifakti onsemi  
Vgs (th) (Max) @ Id -  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake D²PAK (TO-263)  
Seri -  
Rds Sou (Max) @ Id, Vgs 5.8mOhm @ 50A, 10V  
Dissipasyon pouvwa (Max) 90W (Tc)  
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 13200 pF @ 20 V  
Pòtay Charge (Qg) (Max) @ Vgs 280 nC @ 10 V  
Fèt tip P-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4V, 10V  
Drenaj Sous Voltage (Vdss) 60 V  
Kouran - Kontini Drain (Id) @ 25 ° C 100A (Ta)  
Nimewo pwodwi baz BBS3002  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou onsemi BBS3002-DL-1E.

Pwodwi atribi BBS3002-DL-1E BBS3002-DL-E IRF540NSTRRPBF AO4304
Nimewo Pati BBS3002-DL-1E BBS3002-DL-E IRF540NSTRRPBF AO4304
Manifakti onsemi onsemi Infineon Technologies Alpha & Omega Semiconductor Inc.
Pòtay Charge (Qg) (Max) @ Vgs 280 nC @ 10 V 280 nC @ 10 V 71 nC @ 10 V 29 nC @ 10 V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Vgs (th) (Max) @ Id - - 4V @ 250µA 2.4V @ 250µA
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Kondwi Voltage (Max Rds sou, Min Rds sou) 4V, 10V 4V, 10V 10V 4.5V, 10V
Vgs (Max) ±20V ±20V ±20V ±20V
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 8-SOIC (0.154", 3.90mm Width)
Dissipasyon pouvwa (Max) 90W (Tc) 90W (Tc) 130W (Tc) 3.6W (Ta)
Kouran - Kontini Drain (Id) @ 25 ° C 100A (Ta) 100A (Ta) 33A (Tc) 18A (Ta)
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Founisè Aparèy pake D²PAK (TO-263) SMP-FD D2PAK 8-SOIC
Fèt tip P-Channel P-Channel N-Channel N-Channel
Rds Sou (Max) @ Id, Vgs 5.8mOhm @ 50A, 10V 5.8mOhm @ 50A, 10V 44mOhm @ 16A, 10V 6mOhm @ 15A, 10V
FET Feature - - - -
Nimewo pwodwi baz BBS3002 BBS300 IRF540 AO43
Operating Tanperati 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Drenaj Sous Voltage (Vdss) 60 V 60 V 100 V 30 V
Kapasite Antre (Ciss) (Max) @ Vds 13200 pF @ 20 V 13200 pF @ 20 V 1960 pF @ 25 V 1920 pF @ 15 V
Seri - - HEXFET® -

BBS3002-DL-1E fich PDF

Download BBS3002-DL-1E PDF fich ak dokiman onsemi pou BBS3002-DL-1E - onsemi.

Enfòmasyon sou anviwònman an
onsemi RoHS.pdf
PCN obsolescence/ eol
Mult Dev EOL 7/Apr/2021.pdf
Asanble PCN/orijin
Mult Dev Assembly Chg 16/Nov/2020.pdf

Shipment

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onsemi
32D-BBS3002-DL-1E

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