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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleFCPF067N65S3
FCPF067N65S3 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.
EKSPRIME OPSYON
Metòd Peman

FCPF067N65S3 - onsemi

Manifakti Nimewo Pati
FCPF067N65S3
Manifakti
onsemi
Allelco Nimewo Pati
32D-FCPF067N65S3
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 650V 44A TO220F
Pake
TO-220-3 Full Pack
Done fèy
FCPF067N65S3.pdf
RoHs Status
Sètifikasyon nou an
Nan stok: 8181

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite
EKSPRIME OPSYON
Metòd Peman
Sètifikasyon nou an

Espesifikasyon

Espesifikasyon FCPF067N65S3 Tech
onsemi - FCPF067N65S3 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak onsemi - FCPF067N65S3

Pwodwi atribi Valè atribi  
Manifakti onsemi  
Vgs (th) (Max) @ Id 4.5V @ 4.4mA  
Vgs (Max) ±30V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-220F-3  
Seri SuperFET® III  
Rds Sou (Max) @ Id, Vgs 67mOhm @ 22A, 10V  
Dissipasyon pouvwa (Max) 46W (Tc)  
Pake / Ka TO-220-3 Full Pack  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 3090 pF @ 400 V  
Pòtay Charge (Qg) (Max) @ Vgs 78 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 650 V  
Kouran - Kontini Drain (Id) @ 25 ° C 44A (Tc)  
Nimewo pwodwi baz FCPF067  

Anviwònman & ekspòtasyon klasifikasyon

ATRIBI DESKRIPSYON
RoHs Status
Nivo sansiblite imidite (MSL) Not Applicable
Rive nan estati REACH Unaffected
ECCN EAR99
HTSUS

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou onsemi FCPF067N65S3.

Pwodwi atribi FCPF067N65S3 FCP9N60N FCP600N60Z FCPF11N60
Nimewo Pati FCPF067N65S3 FCP9N60N FCP600N60Z FCPF11N60
Manifakti onsemi Fairchild Semiconductor Fairchild Semiconductor onsemi
Seri SuperFET® III SuperMOS™ SuperFET® II SuperFET™
Fèt tip N-Channel N-Channel N-Channel N-Channel
Pòtay Charge (Qg) (Max) @ Vgs 78 nC @ 10 V 29 nC @ 10 V 26 nC @ 10 V 52 nC @ 10 V
Mounting Kalite Through Hole Through Hole Through Hole Through Hole
Rds Sou (Max) @ Id, Vgs 67mOhm @ 22A, 10V 385mOhm @ 4.5A, 10V 600mOhm @ 3.7A, 10V 380mOhm @ 5.5A, 10V
Nimewo pwodwi baz FCPF067 - - FCPF11
Dissipasyon pouvwa (Max) 46W (Tc) 83.3W (Tc) 89W (Tc) 36W (Tc)
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 10V
Kouran - Kontini Drain (Id) @ 25 ° C 44A (Tc) 9A (Tc) 7.4A (Tc) 11A (Tc)
FET Feature - - - -
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Pake / Ka TO-220-3 Full Pack TO-220-3 TO-220-3 TO-220-3 Full Pack
Pakèt Tube Bulk Bulk Tube
Vgs (th) (Max) @ Id 4.5V @ 4.4mA 4V @ 250µA 3.5V @ 250µA 5V @ 250µA
Drenaj Sous Voltage (Vdss) 650 V 600 V 600 V 600 V
Kapasite Antre (Ciss) (Max) @ Vds 3090 pF @ 400 V 1240 pF @ 100 V 1120 pF @ 25 V 1490 pF @ 25 V
Vgs (Max) ±30V ±30V ±20V ±30V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Founisè Aparèy pake TO-220F-3 TO-220-3 TO-220-3 TO-220F-3

FCPF067N65S3 fich PDF

Download FCPF067N65S3 PDF fich ak dokiman onsemi pou FCPF067N65S3 - onsemi.

Enfòmasyon sou anviwònman an
onsemi RoHS.pdf
PCN konsepsyon/spesifikasyon
Logo 17/Aug/2017.pdf FCB0 19/Jul/2016.pdf
PCN anbalaj
Mult Devices 24/Oct/2017.pdf
Asanble PCN/orijin
Assembly/Test Site 14/Dec/2022.pdf
Fich
FCPF067N65S3.pdf

Shipment

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FCPF067N65S3 Image

FCPF067N65S3

onsemi
32D-FCPF067N65S3

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