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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleFDB0105N407L
FDB0105N407L Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

FDB0105N407L - onsemi

Manifakti Nimewo Pati
FDB0105N407L
Manifakti
onsemi
Allelco Nimewo Pati
32D-FDB0105N407L
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 40V 460A TO263-7
Deskripsyon detaye
Pake
TO-263-7, D²Pak (6 Leads + Tab)
Done fèy
FDB0105N407L Datasheet.pdf
RoHs Status
Nan stok: 8701

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon FDB0105N407L Tech
onsemi - FDB0105N407L espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak onsemi - FDB0105N407L

Pwodwi atribi Valè atribi  
Manifakti onsemi  
Vgs (th) (Max) @ Id 4V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-263-7  
Seri PowerTrench®  
Rds Sou (Max) @ Id, Vgs 0.8mOhm @ 50A, 10V  
Dissipasyon pouvwa (Max) 3.8W (Ta), 300W (Tc)  
Pake / Ka TO-263-7, D²Pak (6 Leads + Tab)  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 23100 pF @ 20 V  
Pòtay Charge (Qg) (Max) @ Vgs 291 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 6V, 10V  
Drenaj Sous Voltage (Vdss) 40 V  
Kouran - Kontini Drain (Id) @ 25 ° C 460A (Tc)  
Nimewo pwodwi baz FDB0105  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou onsemi FDB0105N407L.

Pwodwi atribi FDB0105N407L FDB016N04AL7 FDB016N04AL7 FDB0170N607L
Nimewo Pati FDB0105N407L FDB016N04AL7 FDB016N04AL7 FDB0170N607L
Manifakti onsemi Fairchild Semiconductor onsemi Fairchild Semiconductor
Rds Sou (Max) @ Id, Vgs 0.8mOhm @ 50A, 10V 1.6mOhm @ 80A, 10V 1.6mOhm @ 80A, 10V 1.4mOhm @ 39A, 10V
Founisè Aparèy pake TO-263-7 TO-263-7 TO-263-7 TO-263-7
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Kapasite Antre (Ciss) (Max) @ Vds 23100 pF @ 20 V 11600 pF @ 25 V 11600 pF @ 25 V 19250 pF @ 30 V
Pake / Ka TO-263-7, D²Pak (6 Leads + Tab) TO-263-7, D²Pak (6 Leads + Tab) TO-263-7, D²Pak (6 Leads + Tab) TO-263-7, D²Pak (6 Leads + Tab)
Dissipasyon pouvwa (Max) 3.8W (Ta), 300W (Tc) 283W (Tc) 283W (Tc) 3.8W (Ta), 250W (Tc)
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Kondwi Voltage (Max Rds sou, Min Rds sou) 6V, 10V 10V 10V 10V
Drenaj Sous Voltage (Vdss) 40 V 40 V 40 V 60 V
Nimewo pwodwi baz FDB0105 FDB016 FDB016 -
Kouran - Kontini Drain (Id) @ 25 ° C 460A (Tc) 160A (Tc) 160A (Tc) 300A (Tc)
Fèt tip N-Channel N-Channel N-Channel N-Channel
Seri PowerTrench® PowerTrench® PowerTrench® PowerTrench®
Vgs (th) (Max) @ Id 4V @ 250µA 3V @ 250µA 3V @ 250µA 4V @ 250µA
Pakèt Tape & Reel (TR) Bulk Tape & Reel (TR) Bulk
Vgs (Max) ±20V ±20V ±20V ±20V
Pòtay Charge (Qg) (Max) @ Vgs 291 nC @ 10 V 167 nC @ 10 V 167 nC @ 10 V 243 nC @ 10 V
FET Feature - - - -
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)

FDB0105N407L fich PDF

Download FDB0105N407L PDF fich ak dokiman onsemi pou FDB0105N407L - onsemi.

Enfòmasyon sou anviwònman an
onsemi RoHS.pdf
PCN konsepsyon/spesifikasyon
Logo 17/Aug/2017.pdf Description Chg 01/Apr/2016.pdf
PCN anbalaj
Mult Devices 24/Oct/2017.pdf TO263 31/Aug/2016.pdf
Asanble PCN/orijin
Assembly Change 09/May/2023.pdf
Fich
FDB0105N407L Datasheet.pdf

Shipment

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Sètifikasyon & Manm

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FDB0105N407L Image

FDB0105N407L

onsemi
32D-FDB0105N407L

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