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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleFDB031N08
FDB031N08 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

FDB031N08 - onsemi

Manifakti Nimewo Pati
FDB031N08
Manifakti
onsemi
Allelco Nimewo Pati
32D-FDB031N08
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 75V 120A D2PAK
Deskripsyon detaye
Pake
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Done fèy
FDB031N08.pdf
RoHs Status
Nan stok: 7304

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon FDB031N08 Tech
onsemi - FDB031N08 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak onsemi - FDB031N08

Pwodwi atribi Valè atribi  
Manifakti onsemi  
Vgs (th) (Max) @ Id 4.5V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake D²PAK (TO-263)  
Seri PowerTrench®  
Rds Sou (Max) @ Id, Vgs 3.1mOhm @ 75A, 10V  
Dissipasyon pouvwa (Max) 375W (Tc)  
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 15160 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 220 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 75 V  
Kouran - Kontini Drain (Id) @ 25 ° C 120A (Tc)  
Nimewo pwodwi baz FDB031  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou onsemi FDB031N08.

Pwodwi atribi FDB031N08 FDB029N06 FDB035AN06A0 FDB024N08BL7
Nimewo Pati FDB031N08 FDB029N06 FDB035AN06A0 FDB024N08BL7
Manifakti onsemi Fairchild Semiconductor Fairchild Semiconductor onsemi
Dissipasyon pouvwa (Max) 375W (Tc) 231W (Tc) 310W (Tc) 246W (Tc)
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Pòtay Charge (Qg) (Max) @ Vgs 220 nC @ 10 V 151 nC @ 10 V 124 nC @ 10 V 178 nC @ 10 V
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Rds Sou (Max) @ Id, Vgs 3.1mOhm @ 75A, 10V 3.1mOhm @ 75A, 10V 3.5mOhm @ 80A, 10V 2.4mOhm @ 100A, 10V
Seri PowerTrench® PowerTrench® PowerTrench® PowerTrench®
Vgs (th) (Max) @ Id 4.5V @ 250µA 4.5V @ 250µA 4V @ 250µA 4.5V @ 250µA
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 6V, 10V 10V
Fèt tip N-Channel N-Channel N-Channel N-Channel
Founisè Aparèy pake D²PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263) TO-263-7
Nimewo pwodwi baz FDB031 - - FDB024
Kouran - Kontini Drain (Id) @ 25 ° C 120A (Tc) 120A (Tc) 22A (Ta), 80A (Tc) 120A (Tc)
Vgs (Max) ±20V ±20V ±20V ±20V
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-7, D²Pak (6 Leads + Tab)
Pakèt Tape & Reel (TR) Bulk Bulk Tape & Reel (TR)
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Drenaj Sous Voltage (Vdss) 75 V 60 V 60 V 80 V
Kapasite Antre (Ciss) (Max) @ Vds 15160 pF @ 25 V 9815 pF @ 25 V 6400 pF @ 25 V 13530 pF @ 40 V
FET Feature - - - -

FDB031N08 fich PDF

Download FDB031N08 PDF fich ak dokiman onsemi pou FDB031N08 - onsemi.

Enfòmasyon sou anviwònman an
onsemi REACH.pdf onsemi RoHS.pdf
PCN anbalaj
Mult Devices 24/Oct/2017.pdf TO263 31/Aug/2016.pdf
PCN konsepsyon/spesifikasyon
Description Chg 01/Apr/2016.pdf SOA curve 01/Jul/2013.pdf
Asanble PCN/orijin
Assembly Change 09/May/2023.pdf
Fich
FDB031N08.pdf

Shipment

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Sètifikasyon & Manm

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FDB031N08 Image

FDB031N08

onsemi
32D-FDB031N08

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