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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleFDB8870
FDB8870 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.
EKSPRIME OPSYON
Metòd Peman

FDB8870 - onsemi

Manifakti Nimewo Pati
FDB8870
Manifakti
onsemi
Allelco Nimewo Pati
32D-FDB8870
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 30V 23A/160A TO263AB
Pake
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Done fèy
FDB8870.pdf
RoHs Status
Sètifikasyon nou an
Nan stok: 3820

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite
EKSPRIME OPSYON
Metòd Peman
Sètifikasyon nou an

Espesifikasyon

Espesifikasyon FDB8870 Tech
onsemi - FDB8870 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak onsemi - FDB8870

Pwodwi atribi Valè atribi  
Manifakti onsemi  
Vgs (th) (Max) @ Id 2.5V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake D²PAK (TO-263)  
Seri PowerTrench®  
Rds Sou (Max) @ Id, Vgs 3.9mOhm @ 35A, 10V  
Dissipasyon pouvwa (Max) 160W (Tc)  
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 5200 pF @ 15 V  
Pòtay Charge (Qg) (Max) @ Vgs 132 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V  
Drenaj Sous Voltage (Vdss) 30 V  
Kouran - Kontini Drain (Id) @ 25 ° C 23A (Ta), 160A (Tc)  
Nimewo pwodwi baz FDB887  

Anviwònman & ekspòtasyon klasifikasyon

ATRIBI DESKRIPSYON
RoHs Status
Nivo sansiblite imidite (MSL) 1 (Unlimited)
Rive nan estati REACH Unaffected
ECCN EAR99
HTSUS

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou onsemi FDB8870.

Pwodwi atribi FDB8870 FDB8878 FDB8876 FDB8876
Nimewo Pati FDB8870 FDB8878 FDB8876 FDB8876
Manifakti onsemi onsemi onsemi Fairchild Semiconductor
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Drenaj Sous Voltage (Vdss) 30 V 30 V 30 V 30 V
Rds Sou (Max) @ Id, Vgs 3.9mOhm @ 35A, 10V 14mOhm @ 40A, 10V 8.5mOhm @ 40A, 10V 8.5mOhm @ 40A, 10V
Kouran - Kontini Drain (Id) @ 25 ° C 23A (Ta), 160A (Tc) 48A (Tc) 71A (Tc) 71A (Tc)
FET Feature - - - -
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Nimewo pwodwi baz FDB887 FDB887 FDB887 -
Founisè Aparèy pake D²PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263) D2PAK (TO-263)
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Bulk
Fèt tip N-Channel N-Channel N-Channel N-Channel
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Seri PowerTrench® PowerTrench® PowerTrench® PowerTrench®
Pòtay Charge (Qg) (Max) @ Vgs 132 nC @ 10 V 23 nC @ 10 V 45 nC @ 10 V 45 nC @ 10 V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Kapasite Antre (Ciss) (Max) @ Vds 5200 pF @ 15 V 1235 pF @ 15 V 1700 pF @ 15 V 1700 pF @ 15 V
Vgs (th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Vgs (Max) ±20V ±20V ±20V ±20V
Dissipasyon pouvwa (Max) 160W (Tc) 47.3W (Tc) 70W (Tc) 70W (Tc)

FDB8870 fich PDF

Download FDB8870 PDF fich ak dokiman onsemi pou FDB8870 - onsemi.

Enfòmasyon sou anviwònman an
onsemi REACH.pdf onsemi RoHS.pdf
PCN konsepsyon/spesifikasyon
Logo 17/Aug/2017.pdf Description Chg 01/Apr/2016.pdf
PCN anbalaj
Mult Devices 24/Oct/2017.pdf Mult Dev Box Chgs 1/Jul/2021.pdf
Asanble PCN/orijin
Mult Dev Assembly/Material Chgs 15/Mar/2018.pdf
PCN obsolescence/ eol
Mult Dev EOL 8/Apr/2021.pdf
Fich
FDB8870.pdf

Shipment

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Sètifikasyon & Manm

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FDB8870 Image

FDB8870

onsemi
32D-FDB8870

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