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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleFDC606P
onsemi
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

FDC606P - onsemi

Manifakti Nimewo Pati
FDC606P
Manifakti
onsemi
Allelco Nimewo Pati
32D-FDC606P
ECAD modèl
Pati Deskripsyon
MOSFET P-CH 12V 6A SUPERSOT6
Deskripsyon detaye
Pake
SOT-23-6 Thin, TSOT-23-6
Done fèy
FDC606P.pdf
RoHs Status
Nan stok: 91270

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon FDC606P Tech
onsemi - FDC606P espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak onsemi - FDC606P

Pwodwi atribi Valè atribi  
Manifakti onsemi  
Vgs (th) (Max) @ Id 1.5V @ 250µA  
Vgs (Max) ±8V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake SuperSOT™-6  
Seri PowerTrench®  
Rds Sou (Max) @ Id, Vgs 26mOhm @ 6A, 4.5V  
Dissipasyon pouvwa (Max) 1.6W (Ta)  
Pake / Ka SOT-23-6 Thin, TSOT-23-6  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 1699 pF @ 6 V  
Pòtay Charge (Qg) (Max) @ Vgs 25 nC @ 4.5 V  
Fèt tip P-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 1.8V, 4.5V  
Drenaj Sous Voltage (Vdss) 12 V  
Kouran - Kontini Drain (Id) @ 25 ° C 6A (Ta)  
Nimewo pwodwi baz FDC606  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou onsemi FDC606P.

Pwodwi atribi FDC606P FDC604P FDC606P FDC610PZ
Nimewo Pati FDC606P FDC604P FDC606P FDC610PZ
Manifakti onsemi Fairchild Semiconductor Fairchild Semiconductor onsemi
Pakèt Tape & Reel (TR) Bulk Bulk Tape & Reel (TR)
Rds Sou (Max) @ Id, Vgs 26mOhm @ 6A, 4.5V 33mOhm @ 5.5A, 4.5V 26mOhm @ 6A, 4.5V 42mOhm @ 4.9A, 10V
Kouran - Kontini Drain (Id) @ 25 ° C 6A (Ta) 5.5A (Ta) 6A (Ta) 4.9A (Ta)
FET Feature - - - -
Dissipasyon pouvwa (Max) 1.6W (Ta) 1.6W (Ta) 1.6W (Ta) 1.6W (Ta)
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Fèt tip P-Channel P-Channel P-Channel P-Channel
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Nimewo pwodwi baz FDC606 - - FDC610
Kapasite Antre (Ciss) (Max) @ Vds 1699 pF @ 6 V 1926 pF @ 10 V 1699 pF @ 6 V 1005 pF @ 15 V
Founisè Aparèy pake SuperSOT™-6 SuperSOT™-6 SuperSOT™-6 SuperSOT™-6
Pòtay Charge (Qg) (Max) @ Vgs 25 nC @ 4.5 V 30 nC @ 4.5 V 25 nC @ 4.5 V 24 nC @ 10 V
Seri PowerTrench® PowerTrench® PowerTrench® PowerTrench®
Vgs (th) (Max) @ Id 1.5V @ 250µA 1.5V @ 250µA 1.5V @ 250µA 3V @ 250µA
Vgs (Max) ±8V ±8V ±8V ±25V
Pake / Ka SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6
Kondwi Voltage (Max Rds sou, Min Rds sou) 1.8V, 4.5V 1.8V, 4.5V 1.8V, 4.5V 4.5V, 10V
Drenaj Sous Voltage (Vdss) 12 V 20 V 12 V 30 V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)

FDC606P fich PDF

Download FDC606P PDF fich ak dokiman onsemi pou FDC606P - onsemi.

Enfòmasyon sou anviwònman an
onsemi REACH.pdf onsemi RoHS.pdf
PCN anbalaj
Mult Devices 24/Oct/2017.pdf Marking Change 07/Oct/2022.pdf
PCN konsepsyon/spesifikasyon
Marking Change 07/Oct/2022.pdf Marking Change 17/Nov/2021.pdf
Asanble PCN/orijin
Mult Dev A/T Chgs 13/Dec/2021.pdf
Fich
FDC606P.pdf

Shipment

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onsemi

FDC606P

onsemi
32D-FDC606P

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