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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleFDC653N
onsemi
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

FDC653N - onsemi

Manifakti Nimewo Pati
FDC653N
Manifakti
onsemi
Allelco Nimewo Pati
32D-FDC653N
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 30V 5A SUPERSOT6
Deskripsyon detaye
Pake
SOT-23-6 Thin, TSOT-23-6
Done fèy
FDC653N.pdf
RoHs Status
Nan stok: 163980

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon FDC653N Tech
onsemi - FDC653N espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak onsemi - FDC653N

Pwodwi atribi Valè atribi  
Manifakti onsemi  
Vgs (th) (Max) @ Id 2V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake SuperSOT™-6  
Seri -  
Rds Sou (Max) @ Id, Vgs 35mOhm @ 5A, 10V  
Dissipasyon pouvwa (Max) 1.6W (Ta)  
Pake / Ka SOT-23-6 Thin, TSOT-23-6  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 350 pF @ 15 V  
Pòtay Charge (Qg) (Max) @ Vgs 17 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V  
Drenaj Sous Voltage (Vdss) 30 V  
Kouran - Kontini Drain (Id) @ 25 ° C 5A (Ta)  
Nimewo pwodwi baz FDC653  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou onsemi FDC653N.

Pwodwi atribi FDC653N FDC654P FDC655AN FDC654P
Nimewo Pati FDC653N FDC654P FDC655AN FDC654P
Manifakti onsemi Fairchild Semiconductor onsemi onsemi
Vgs (th) (Max) @ Id 2V @ 250µA 3V @ 250µA 3V @ 250µA 3V @ 250µA
Rds Sou (Max) @ Id, Vgs 35mOhm @ 5A, 10V 75mOhm @ 3.6A, 10V 27mOhm @ 6.3A, 10V 75mOhm @ 3.6A, 10V
Kapasite Antre (Ciss) (Max) @ Vds 350 pF @ 15 V 298 pF @ 15 V 830 pF @ 15 V 298 pF @ 15 V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Pòtay Charge (Qg) (Max) @ Vgs 17 nC @ 10 V 9 nC @ 10 V 13 nC @ 5 V 9 nC @ 10 V
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Nimewo pwodwi baz FDC653 - FDC655 FDC654
FET Feature - - - -
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Dissipasyon pouvwa (Max) 1.6W (Ta) 1.6W (Ta) 1.6W (Ta) 1.6W (Ta)
Vgs (Max) ±20V ±20V ±20V ±20V
Founisè Aparèy pake SuperSOT™-6 SuperSOT™-6 SuperSOT™-6 SuperSOT™-6
Kouran - Kontini Drain (Id) @ 25 ° C 5A (Ta) 3.6A (Ta) 6.3A (Ta) 3.6A (Ta)
Pakèt Tape & Reel (TR) Bulk Tape & Reel (TR) Tape & Reel (TR)
Drenaj Sous Voltage (Vdss) 30 V 30 V 30 V 30 V
Seri - PowerTrench® PowerTrench® PowerTrench®
Pake / Ka SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6
Fèt tip N-Channel P-Channel N-Channel P-Channel

FDC653N fich PDF

Download FDC653N PDF fich ak dokiman onsemi pou FDC653N - onsemi.

Enfòmasyon sou anviwònman an
onsemi REACH.pdf onsemi RoHS.pdf
PCN konsepsyon/spesifikasyon
Marking Change 07/Oct/2022.pdf Marking Change 17/Nov/2021.pdf
PCN anbalaj
Marking Change 07/Oct/2022.pdf Binary Year Code Marking 15/Jan/2014.pdf
Asanble PCN/orijin
FDC63yyy 14/Aug/2020.pdf
Fich
FDC653N.pdf

Shipment

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onsemi

FDC653N

onsemi
32D-FDC653N

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