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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleFDD86113LZ
FDD86113LZ Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

FDD86113LZ - onsemi

Manifakti Nimewo Pati
FDD86113LZ
Manifakti
onsemi
Allelco Nimewo Pati
32D-FDD86113LZ
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 100V 4.2A/5.5A DPAK
Deskripsyon detaye
Pake
TO-252-3, DPak (2 Leads + Tab), SC-63
Done fèy
FDD86113LZ.pdf
RoHs Status
Nan stok: 66520

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon FDD86113LZ Tech
onsemi - FDD86113LZ espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak onsemi - FDD86113LZ

Pwodwi atribi Valè atribi  
Manifakti onsemi  
Vgs (th) (Max) @ Id 3V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-252AA  
Seri PowerTrench®  
Rds Sou (Max) @ Id, Vgs 104mOhm @ 4.2A, 10V  
Dissipasyon pouvwa (Max) 3.1W (Ta), 29W (Tc)  
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 285 pF @ 50 V  
Pòtay Charge (Qg) (Max) @ Vgs 6 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V  
Drenaj Sous Voltage (Vdss) 100 V  
Kouran - Kontini Drain (Id) @ 25 ° C 4.2A (Ta), 5.5A (Tc)  
Nimewo pwodwi baz FDD86113  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou onsemi FDD86113LZ.

Pwodwi atribi FDD86113LZ FDD86367 FDD86326 FDD86102
Nimewo Pati FDD86113LZ FDD86367 FDD86326 FDD86102
Manifakti onsemi onsemi onsemi onsemi
Vgs (th) (Max) @ Id 3V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Founisè Aparèy pake TO-252AA D-PAK (TO-252) TO-252AA TO-252AA
Rds Sou (Max) @ Id, Vgs 104mOhm @ 4.2A, 10V 4.2mOhm @ 80A, 10V 23mOhm @ 8A, 10V 24mOhm @ 8A, 10V
Vgs (Max) ±20V ±20V ±20V ±20V
Dissipasyon pouvwa (Max) 3.1W (Ta), 29W (Tc) 227W (Tj) 3.1W (Ta), 62W (Tc) 3.1W (Ta), 62W (Tc)
Nimewo pwodwi baz FDD86113 FDD863 FDD863 FDD861
Seri PowerTrench® Automotive, AEC-Q101, PowerTrench® PowerTrench® PowerTrench®
FET Feature - - - -
Kouran - Kontini Drain (Id) @ 25 ° C 4.2A (Ta), 5.5A (Tc) 100A (Tc) 8A (Ta), 37A (Tc) 8A (Ta), 36A (Tc)
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Kapasite Antre (Ciss) (Max) @ Vds 285 pF @ 50 V 4840 pF @ 40 V 1035 pF @ 50 V 1035 pF @ 50 V
Fèt tip N-Channel N-Channel N-Channel N-Channel
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V 10V 6V, 10V 6V, 10V
Drenaj Sous Voltage (Vdss) 100 V 80 V 80 V 100 V
Pòtay Charge (Qg) (Max) @ Vgs 6 nC @ 10 V 88 nC @ 10 V 19 nC @ 10 V 19 nC @ 10 V
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)

FDD86113LZ fich PDF

Download FDD86113LZ PDF fich ak dokiman onsemi pou FDD86113LZ - onsemi.

Enfòmasyon sou anviwònman an
onsemi RoHS.pdf
PCN konsepsyon/spesifikasyon
Logo 17/Aug/2017.pdf Description Chg 01/Apr/2016.pdf
PCN anbalaj
Mult Devices 24/Oct/2017.pdf
Asanble PCN/orijin
Assembly Change 28/May/2023.pdf
Fich
FDD86113LZ.pdf

Shipment

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FDD86113LZ

onsemi
32D-FDD86113LZ

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