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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleFDMS4D4N08C
onsemi
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

FDMS4D4N08C - onsemi

Manifakti Nimewo Pati
FDMS4D4N08C
Manifakti
onsemi
Allelco Nimewo Pati
32D-FDMS4D4N08C
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 80V 123A 8PQFN
Deskripsyon detaye
Pake
8-PowerTDFN
Done fèy
FDMS4D4N08C.pdf
RoHs Status
Nan stok: 21816

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon FDMS4D4N08C Tech
onsemi - FDMS4D4N08C espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak onsemi - FDMS4D4N08C

Pwodwi atribi Valè atribi  
Manifakti onsemi  
Vgs (th) (Max) @ Id 4V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-PQFN (5x6), Power56  
Seri PowerTrench®  
Rds Sou (Max) @ Id, Vgs 4.3mOhm @ 44A, 10V  
Dissipasyon pouvwa (Max) 125W (Tc)  
Pake / Ka 8-PowerTDFN  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 4090 pF @ 40 V  
Pòtay Charge (Qg) (Max) @ Vgs 56 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 6V, 10V  
Drenaj Sous Voltage (Vdss) 80 V  
Kouran - Kontini Drain (Id) @ 25 ° C 123A (Tc)  
Nimewo pwodwi baz FDMS4D4  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou onsemi FDMS4D4N08C.

Pwodwi atribi FDMS4D4N08C FDMS5352 FDMS4435BZ FDMS3672
Nimewo Pati FDMS4D4N08C FDMS5352 FDMS4435BZ FDMS3672
Manifakti onsemi onsemi onsemi onsemi
FET Feature - - - -
Vgs (Max) ±20V ±20V ±25V ±20V
Pòtay Charge (Qg) (Max) @ Vgs 56 nC @ 10 V 131 nC @ 10 V 47 nC @ 10 V 44 nC @ 10 V
Founisè Aparèy pake 8-PQFN (5x6), Power56 8-PQFN (5x6) 8-PQFN (5x6) 8-MLP (5x6), Power56
Nimewo pwodwi baz FDMS4D4 FDMS53 FDMS4435 FDMS36
Seri PowerTrench® PowerTrench® PowerTrench® UltraFET™
Pake / Ka 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerWDFN
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Vgs (th) (Max) @ Id 4V @ 250µA 3V @ 250µA 3V @ 250µA 4V @ 250µA
Kondwi Voltage (Max Rds sou, Min Rds sou) 6V, 10V 4.5V, 10V 4.5V, 10V 6V, 10V
Kapasite Antre (Ciss) (Max) @ Vds 4090 pF @ 40 V 6940 pF @ 30 V 2050 pF @ 15 V 2680 pF @ 50 V
Dissipasyon pouvwa (Max) 125W (Tc) 2.5W (Ta), 104W (Tc) 2.5W (Ta), 39W (Tc) 2.5W (Ta), 78W (Tc)
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Drenaj Sous Voltage (Vdss) 80 V 60 V 30 V 100 V
Fèt tip N-Channel N-Channel P-Channel N-Channel
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Kouran - Kontini Drain (Id) @ 25 ° C 123A (Tc) 13.6A (Ta), 49A (Tc) 9A (Ta), 18A (Tc) 7.4A (Ta), 22A (Tc)
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Rds Sou (Max) @ Id, Vgs 4.3mOhm @ 44A, 10V 6.7mOhm @ 13.6A, 10V 20mOhm @ 9A, 10V 23mOhm @ 7.4A, 10V

FDMS4D4N08C fich PDF

Download FDMS4D4N08C PDF fich ak dokiman onsemi pou FDMS4D4N08C - onsemi.

Enfòmasyon sou anviwònman an
onsemi REACH.pdf onsemi RoHS.pdf
PCN konsepsyon/spesifikasyon
Logo 17/Aug/2017.pdf
PCN anbalaj
Mult Devices 24/Oct/2017.pdf
Fich
FDMS4D4N08C.pdf
Asanble PCN/orijin
PQFN56 Wire Source 9/Dec/2020.pdf

Shipment

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FDMS4D4N08C

onsemi
32D-FDMS4D4N08C

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