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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - ArrayFDPC5030SG
onsemi
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.
EKSPRIME OPSYON
Metòd Peman

FDPC5030SG - onsemi

Manifakti Nimewo Pati
FDPC5030SG
Manifakti
onsemi
Allelco Nimewo Pati
32D-FDPC5030SG
ECAD modèl
Pati Deskripsyon
MOSFET 2N-CH 30V PWRCLIP56
Pake
8-PowerWDFN
Done fèy
FDPC5030SG.pdf
RoHs Status
Sètifikasyon nou an
Nan stok: 42010

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite
EKSPRIME OPSYON
Metòd Peman
Sètifikasyon nou an

Espesifikasyon

Espesifikasyon FDPC5030SG Tech
onsemi - FDPC5030SG espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak onsemi - FDPC5030SG

Pwodwi atribi Valè atribi  
Manifakti onsemi  
Vgs (th) (Max) @ Id 3V @ 250µA  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake Power Clip 56  
Seri PowerTrench®  
Rds Sou (Max) @ Id, Vgs 5mOhm @ 17A, 10V  
Pouvwa - Max 1W, 1.1W  
Pake / Ka 8-PowerWDFN  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 1715pF @ 15V  
Pòtay Charge (Qg) (Max) @ Vgs 24nC @ 10V  
FET Feature -  
Drenaj Sous Voltage (Vdss) 30V  
Kouran - Kontini Drain (Id) @ 25 ° C 17A, 25A  
Konfigirasyon 2 N-Channel (Dual) Asymmetrical  
Nimewo pwodwi baz FDPC5030  

Anviwònman & ekspòtasyon klasifikasyon

ATRIBI DESKRIPSYON
RoHs Status
Nivo sansiblite imidite (MSL) 1 (Unlimited)
Rive nan estati REACH Unaffected
ECCN EAR99
HTSUS

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou onsemi FDPC5030SG.

Pwodwi atribi FDPC5030SG FDPC8012S FDPC8013S FDPC8016S
Nimewo Pati FDPC5030SG FDPC8012S FDPC8013S FDPC8016S
Manifakti onsemi onsemi onsemi onsemi
Vgs (th) (Max) @ Id 3V @ 250µA 2.2V @ 250µA 3V @ 250µA 2.5V @ 250µA
Founisè Aparèy pake Power Clip 56 Powerclip-33 Powerclip-33 Power Clip 56
Kouran - Kontini Drain (Id) @ 25 ° C 17A, 25A 13A, 26A 13A, 26A 20A, 35A
FET Feature - Logic Level Gate Logic Level Gate Logic Level Gate
Pòtay Charge (Qg) (Max) @ Vgs 24nC @ 10V 8nC @ 4.5V 13nC @ 10V 35nC @ 10V
Pake / Ka 8-PowerWDFN 8-PowerWDFN 8-PowerWDFN 8-PowerWDFN
Rds Sou (Max) @ Id, Vgs 5mOhm @ 17A, 10V 7mOhm @ 12A, 4.5V 6.4mOhm @ 13A, 10V 3.8mOhm @ 20A, 10V
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Drenaj Sous Voltage (Vdss) 30V 25V 30V 25V
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Seri PowerTrench® PowerTrench® PowerTrench® PowerTrench®
Konfigirasyon 2 N-Channel (Dual) Asymmetrical 2 N-Channel (Dual) Asymmetrical 2 N-Channel (Dual) 2 N-Channel (Dual) Asymmetrical
Kapasite Antre (Ciss) (Max) @ Vds 1715pF @ 15V 1075pF @ 13V 827pF @ 15V 2375pF @ 13V
Nimewo pwodwi baz FDPC5030 FDPC8012 FDPC8013 FDPC8016
Pouvwa - Max 1W, 1.1W 800mW, 900mW 800mW, 900mW 2.1W, 2.3W
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)

FDPC5030SG fich PDF

Download FDPC5030SG PDF fich ak dokiman onsemi pou FDPC5030SG - onsemi.

Enfòmasyon sou anviwònman an
onsemi REACH.pdf onsemi RoHS.pdf
PCN konsepsyon/spesifikasyon
Logo 17/Aug/2017.pdf Gate Leadpost Dimension Change 01/Sep/2021.pdf
PCN anbalaj
Mult Devices 24/Oct/2017.pdf
Fich
FDPC5030SG.pdf
Asanble PCN/orijin
Wafer Fab 05/Apr/2023.pdf

Shipment

Tan livrezon

Nan-stock atik yo ka anbake nan lespas 24 èdtan.Gen kèk pati ki pral ranje pou livrezon nan 1-2 jou soti nan dat la tout atik rive nan depo nou yo.Ak Allelco bato lòd yon fwa nan yon jounen nan sou 17:00, eksepte Dimanch.Yon fwa byen yo ap anbake, tan an livrezon estime depann sou metòd yo anbake ak destinasyon livrezon.Tablo ki anba a montre yo se tan an lojistik pou kèk peyi komen.

Pri livrezon

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Metòd livrezon

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Sètifikasyon & Manm

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onsemi

FDPC5030SG

onsemi
32D-FDPC5030SG

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