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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleFQB19N20CTM
FQB19N20CTM Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

FQB19N20CTM - onsemi

Manifakti Nimewo Pati
FQB19N20CTM
Manifakti
onsemi
Allelco Nimewo Pati
32D-FQB19N20CTM
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 200V 19A D2PAK
Deskripsyon detaye
Pake
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Done fèy
FQB19N20C.pdf
RoHs Status
Nan stok: 4330

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon FQB19N20CTM Tech
onsemi - FQB19N20CTM espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak onsemi - FQB19N20CTM

Pwodwi atribi Valè atribi  
Manifakti onsemi  
Vgs (th) (Max) @ Id 4V @ 250µA  
Vgs (Max) ±30V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake D²PAK (TO-263)  
Seri QFET®  
Rds Sou (Max) @ Id, Vgs 170mOhm @ 9.5A, 10V  
Dissipasyon pouvwa (Max) 3.13W (Ta), 139W (Tc)  
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 1080 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 53 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 200 V  
Kouran - Kontini Drain (Id) @ 25 ° C 19A (Tc)  
Nimewo pwodwi baz FQB19N20  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou onsemi FQB19N20CTM.

Pwodwi atribi FQB19N20CTM FQB19N10TM FQB19N20LTM FQB17P10TM
Nimewo Pati FQB19N20CTM FQB19N10TM FQB19N20LTM FQB17P10TM
Manifakti onsemi onsemi onsemi Fairchild Semiconductor
Vgs (Max) ±30V ±25V ±20V ±30V
Drenaj Sous Voltage (Vdss) 200 V 100 V 200 V 100 V
Founisè Aparèy pake D²PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263) D2PAK (TO-263)
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Seri QFET® QFET® QFET® QFET®
Pòtay Charge (Qg) (Max) @ Vgs 53 nC @ 10 V 25 nC @ 10 V 35 nC @ 5 V 39 nC @ 10 V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Nimewo pwodwi baz FQB19N20 FQB1 FQB19N20 -
FET Feature - - - -
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Bulk
Kapasite Antre (Ciss) (Max) @ Vds 1080 pF @ 25 V 780 pF @ 25 V 2200 pF @ 25 V 1100 pF @ 25 V
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 5V, 10V 10V
Fèt tip N-Channel N-Channel N-Channel P-Channel
Dissipasyon pouvwa (Max) 3.13W (Ta), 139W (Tc) 3.75W (Ta), 75W (Tc) 3.13W (Ta), 140W (Tc) 3.75W (Ta), 100W (Tc)
Vgs (th) (Max) @ Id 4V @ 250µA 4V @ 250µA 2V @ 250µA 4V @ 250µA
Rds Sou (Max) @ Id, Vgs 170mOhm @ 9.5A, 10V 100mOhm @ 9.5A, 10V 140mOhm @ 10.5A, 10V 190mOhm @ 8.25A, 10V
Kouran - Kontini Drain (Id) @ 25 ° C 19A (Tc) 19A (Tc) 21A (Tc) 16.5A (Tc)

FQB19N20CTM fich PDF

Download FQB19N20CTM PDF fich ak dokiman onsemi pou FQB19N20CTM - onsemi.

Enfòmasyon sou anviwònman an
onsemi REACH.pdf onsemi RoHS.pdf
PCN konsepsyon/spesifikasyon
Logo 17/Aug/2017.pdf Description Chg 01/Apr/2016.pdf
PCN obsolescence/ eol
Mult Dev EOL 30/Jun/2022.pdf
PCN anbalaj
TO263 31/Aug/2016.pdf Mult Dev Box Chgs 1/Jul/2021.pdf
Fich
FQB19N20C.pdf
Asanble PCN/orijin
Multiple Parts 23/Jun/2022.pdf

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Sètifikasyon & Manm

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FQB19N20CTM Image

FQB19N20CTM

onsemi
32D-FQB19N20CTM

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