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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleFQB3N80TM
FQB3N80TM Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

FQB3N80TM - onsemi

Manifakti Nimewo Pati
FQB3N80TM
Manifakti
onsemi
Allelco Nimewo Pati
32D-FQB3N80TM
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 800V 3A D2PAK
Deskripsyon detaye
Pake
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Done fèy
FQB3N80TM.pdf
Nan stok: 3810

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon FQB3N80TM Tech
onsemi - FQB3N80TM espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak onsemi - FQB3N80TM

Pwodwi atribi Valè atribi  
Manifakti onsemi  
Vgs (th) (Max) @ Id 5V @ 250µA  
Vgs (Max) ±30V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake D²PAK (TO-263)  
Seri QFET®  
Rds Sou (Max) @ Id, Vgs 5Ohm @ 1.5A, 10V  
Dissipasyon pouvwa (Max) -  
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 690 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 19 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 800 V  
Kouran - Kontini Drain (Id) @ 25 ° C 3A (Tc)  
Nimewo pwodwi baz FQB3  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou onsemi FQB3N80TM.

Pwodwi atribi FQB3N80TM FQB3P20TM FQB34N20TM FQB34P10TM
Nimewo Pati FQB3N80TM FQB3P20TM FQB34N20TM FQB34P10TM
Manifakti onsemi onsemi Fairchild Semiconductor onsemi
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Fèt tip N-Channel P-Channel N-Channel P-Channel
Seri QFET® QFET® QFET® QFET®
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 10V
Drenaj Sous Voltage (Vdss) 800 V 200 V 200 V 100 V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Vgs (Max) ±30V ±30V ±30V ±25V
Kapasite Antre (Ciss) (Max) @ Vds 690 pF @ 25 V 250 pF @ 25 V 3100 pF @ 25 V 2910 pF @ 25 V
Pakèt Tape & Reel (TR) Tape & Reel (TR) Bulk Tape & Reel (TR)
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
FET Feature - - - -
Vgs (th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 4V @ 250µA
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Rds Sou (Max) @ Id, Vgs 5Ohm @ 1.5A, 10V 2.7Ohm @ 1.4A, 10V 75mOhm @ 15.5A, 10V 60mOhm @ 16.75A, 10V
Nimewo pwodwi baz FQB3 FQB3 - FQB34P10
Dissipasyon pouvwa (Max) - 3.13W (Ta), 52W (Tc) 3.13W (Ta), 180W (Tc) 3.75W (Ta), 155W (Tc)
Kouran - Kontini Drain (Id) @ 25 ° C 3A (Tc) 2.8A (Tc) 31A (Tc) 33.5A (Tc)
Pòtay Charge (Qg) (Max) @ Vgs 19 nC @ 10 V 8 nC @ 10 V 78 nC @ 10 V 110 nC @ 10 V
Founisè Aparèy pake D²PAK (TO-263) D²PAK (TO-263) D2PAK (TO-263) D²PAK (TO-263)

FQB3N80TM fich PDF

Download FQB3N80TM PDF fich ak dokiman onsemi pou FQB3N80TM - onsemi.

Enfòmasyon sou anviwònman an
onsemi RoHS.pdf

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Sètifikasyon & Manm

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FQB3N80TM Image

FQB3N80TM

onsemi
32D-FQB3N80TM

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