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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleFQD1N80TM
FQD1N80TM Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

FQD1N80TM - onsemi

Manifakti Nimewo Pati
FQD1N80TM
Manifakti
onsemi
Allelco Nimewo Pati
32D-FQD1N80TM
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 800V 1A DPAK
Deskripsyon detaye
Pake
TO-252-3, DPak (2 Leads + Tab), SC-63
Done fèy
FQD1N80, FQU1N80.pdf
RoHs Status
Nan stok: 30580

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon FQD1N80TM Tech
onsemi - FQD1N80TM espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak onsemi - FQD1N80TM

Pwodwi atribi Valè atribi  
Manifakti onsemi  
Vgs (th) (Max) @ Id 5V @ 250µA  
Vgs (Max) ±30V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-252AA  
Seri QFET®  
Rds Sou (Max) @ Id, Vgs 20Ohm @ 500mA, 10V  
Dissipasyon pouvwa (Max) 2.5W (Ta), 45W (Tc)  
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 195 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 7.2 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 800 V  
Kouran - Kontini Drain (Id) @ 25 ° C 1A (Tc)  
Nimewo pwodwi baz FQD1N80  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou onsemi FQD1N80TM.

Pwodwi atribi FQD1N80TM FQD1N60CTM FQD20N06LETM FQD20N06LETM
Nimewo Pati FQD1N80TM FQD1N60CTM FQD20N06LETM FQD20N06LETM
Manifakti onsemi onsemi Fairchild Semiconductor onsemi
Vgs (th) (Max) @ Id 5V @ 250µA 4V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Dissipasyon pouvwa (Max) 2.5W (Ta), 45W (Tc) 2.5W (Ta), 28W (Tc) 2.5W (Ta), 38W (Tc) 2.5W (Ta), 38W (Tc)
Pòtay Charge (Qg) (Max) @ Vgs 7.2 nC @ 10 V 6.2 nC @ 10 V 13 nC @ 5 V 13 nC @ 5 V
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 5V, 10V 5V, 10V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Founisè Aparèy pake TO-252AA TO-252AA TO-252, (D-Pak) TO-252AA
Rds Sou (Max) @ Id, Vgs 20Ohm @ 500mA, 10V 11.5Ohm @ 500mA, 10V 60mOhm @ 8.6A, 10V 60mOhm @ 8.6A, 10V
Kouran - Kontini Drain (Id) @ 25 ° C 1A (Tc) 1A (Tc) 17.2A (Tc) 17.2A (Tc)
Pakèt Tape & Reel (TR) Tape & Reel (TR) Bulk Tape & Reel (TR)
Kapasite Antre (Ciss) (Max) @ Vds 195 pF @ 25 V 170 pF @ 25 V 665 pF @ 25 V 665 pF @ 25 V
FET Feature - - - -
Vgs (Max) ±30V ±30V ±20V ±20V
Fèt tip N-Channel N-Channel N-Channel N-Channel
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Drenaj Sous Voltage (Vdss) 800 V 600 V 60 V 60 V
Seri QFET® QFET® QFET® QFET®
Nimewo pwodwi baz FQD1N80 FQD1N60 - FQD2

FQD1N80TM fich PDF

Download FQD1N80TM PDF fich ak dokiman onsemi pou FQD1N80TM - onsemi.

Enfòmasyon sou anviwònman an
onsemi REACH.pdf onsemi RoHS.pdf
PCN konsepsyon/spesifikasyon
Logo 17/Aug/2017.pdf Description Chg 01/Apr/2016.pdf
PCN anbalaj
Mult Devices 24/Oct/2017.pdf Tape and Box/Reel Barcode Update 07/Aug/2014.pdf
PCN obsolescence/ eol
Mult Dev EOL 30/Jun/2022.pdf
Asanble PCN/orijin
Mult Dev 13/Aug/2020.pdf
Fich
FQD1N80, FQU1N80.pdf

Shipment

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Sètifikasyon & Manm

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FQD1N80TM Image

FQD1N80TM

onsemi
32D-FQD1N80TM

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